Bismuth Resists for EUV Lithography

Passarelli, James; Sortland, Miriam; Re, Ryan Del; Cardineau, Brian; Sarma, Chandra; Freedman, Daniel A.; Brainard, Robert L.

doi:10.2494/photopolymer.27.655

Cited by 32 publications

(27 citation statements)

References 9 publications

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“…It can be quite challenging to determine the solid-state products of EUV photolysis of metal-containing photoresists. [5][6][7][8][9][10] Volatile products can typically be identified using massspectroscopy during exposure, but the nonvolatile products are in very thin films in quantities typically <1m g , and no single spectroscopic technique is capable of telling the whole story.…”

Section: Photolysis Products Ofmentioning

confidence: 99%

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First-row transitional-metal oxalate resists for EUV

Wilklow-Marnell

Moglia

Steimle

2018

J. Micro/Nanolith. MEMS MOEMS

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We have developed inorganic oxalate compounds ½PPh 3 ðCH 2 PhÞ½Mð2; 2 0-bipyridineÞ n ðoxalateÞ ð3−nÞ (n ¼ 1,2,3;M¼ Co, Fe, Cr) capable of acting as negative-tone extreme ultraviolet (EUV) resists. Two important trends are observed: (1) sensitivity increases with the number of oxalate ligands; (2) Cobalt and iron complexes exhibit greater sensitivity than analogous chromium complexes. Lithographic studies of the most successful compound, ½PPh 3 ðCH 2 PhÞ½Coð2; 2 0-bipyridineÞðoxalateÞ 2 , show that it can consistently achieve 20 nm h/p lines at doses approaching 30 mJ∕cm 2. Infrared, paramagnetic nuclear magnetic resonance, and cyclic voltammetric studies of this compound show that the reaction products of the EUV photochemistry are Co(II)(2,2'-bipyridine) (oxalate) and ½PPh 3 ðCH 2 PhÞ 2 ðoxalateÞ formed from the decomposition of one of the oxalate ligands into two equivalents each of carbon dioxide and electrons.

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Section: Photolysis Products Ofmentioning

confidence: 99%

“…Our group has evaluated the utility of creating photoresists out of 10 to 14 metals that exhibit moderate to high EUV absorptivity. [5][6][7][8][9][10] We call this project, Molecular Organometallic Resists for EUV.…”

Section: Introductionmentioning

confidence: 99%

First-row transitional-metal oxalate resists for EUV

Wilklow-Marnell

Moglia

Steimle

2018

J. Micro/Nanolith. MEMS MOEMS

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“…This is a reason why EUV resists require a higher concentration of acid generators than KrF and ArF resists [12]. With the reduction in feature size, the increase in acid generator concentration is essentially required not only to meet the sensitivity viewpoint of absorption enhancement [27,28]. The metalcontaining resists also have an advantage in the etching durability.…”

Section: Absorption (Energy Deposition On Resist Material)mentioning

confidence: 97%

Resist material options for extreme ultraviolet lithography

Kozawa

2015

Advanced Optical Technologies

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Owing to the worldwide efforts, the development of extreme ultraviolet (EUV) lithography has significantly progressed during the past decade. The resolution of chemically amplified resists has reached sub-16-nm region. From the viewpoint of the extendibility of EUV lithography, the development of resist materials capable of resolving sub-10-nm is an urgent task. In this review, the resist material options for EUV lithography are discussed on the basis of the EUV sensitization mechanisms after reviewing the problems for the sub-10-nm fabrication.

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“…Oxidation by sulfuryl chloride of bismuth-phenyl oligomer gave oxidation state of +V with two Cl atoms on bismuth, which provided negative tone resist enabling 21 nm line resolution while replacement of two chlorides with two acetates gave another resist with sensitivity of 30 mJ/cm 2 . But overall resist performance was not remarkable at this point [52].…”

Section: Other Materialsmentioning

confidence: 99%

Recent EUV Resists toward High Volume Manufacturing

Nakagawa¹,

Naruoka²,

Nagai³

2014

J. Photopol. Sci. Technol.

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Extreme ultraviolet lithography (EUVL) has been an attractive method as next generation lithography (NGL) over 20 years, and high-volume manufacturing (HVM) is now going to be realized by great progresses in materials as well as EUV source power enhancement. In this paper, recent reported materials for EUVL are summarized ranging from conventional organic material base resists to novel inorganic material base resists.

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Bismuth Resists for EUV Lithography

Cited by 32 publications

References 9 publications

First-row transitional-metal oxalate resists for EUV

First-row transitional-metal oxalate resists for EUV

Resist material options for extreme ultraviolet lithography

Recent EUV Resists toward High Volume Manufacturing

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