Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

“…This low value of SET voltages can be explained by the enhanced formation process of conducting filaments in the presence of ITO as the bottom electrode, and by multi-oxidation states exist in VO x nanosheets (details mechanism will be discussed later). As compared to thin film VO x based resistive switching devices reported by several research groups, 11,13,34 our VO x nanosheet devices show better performance in terms (i) electroforming-free resistive switching performance, (ii) low SET bias, and (iii) better DC cyclic stability. This advantage of using nanosheets is very useful for making low power resistive switching memory devices.…”

Characteristics of graphene-oxide-based flexible and transparent resistive switching memory

“…Flexible electronics is also popular because of its slim, light, and easy to carry [4][5][6]. In addition, transparent electronic equipment is also attracting much attention recently [7]. Since the needs of flexible and transparent electronic equipment, the electronic memories should be improved.…”

“…In addition, indium tin oxide (ITO) is a transparent conductive material, which is an n-type semiconductor and has a wide band gap [22]. Many research teams have used them as electrodes [7,16]. Therefore, a flexible, transparent, and nonvolatile ITO/GO/ITO/polyethersulfone (PES) resistive switching memory is studied in this work.…”

Electrical and Ferroelectric Properties of the Bi3.9La0.1Ti2.9V0.1O12 (BLTV) Thin Films

“…The improvement in phenomenon and performance of the SCCO2 technology at lower temperature were investigated to terminate traps in thin film [1][2][3]. Ferroelectric thin films were focused on the applications in ferroelectric random access memory (FeRAMs), such as portable electrical devices and smart cards utilizing large remnant polarization (2Pr), low coercive field, fatigue-free, low electric consumption, and non-volatility [4][5][6][7][8][9][10][11]. In pervious reports, the BIT materials exhibit higher leakage current and domain pinning properties because of the defects such as bismuth and oxygen vacancies.…”