2022
DOI: 10.1016/j.electacta.2022.139832
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Binder-free nanostructured germanium anode for high resilience lithium-ion battery

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Cited by 18 publications
(14 citation statements)
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“…However, the Raman stress mapping technique could also be readily applied to Ge electrodes, with two advantages: (1) Ge has the same crystal symmetry and Raman activity as Si, and the Raman shift–stress relationship has been explored; (2) Ge has potential applications as a Li-ion battery electrode , with a slightly higher potential (0.4–0.2 V vs Li/Li + ) than Si, which would allow for deeper depth of discharge with less SEI formation. A promising extension of this work would be a similar analysis of the stress profile and ECM coupling effects in Ge thin-film island electrodes.…”
Section: Discussionmentioning
confidence: 99%
“…However, the Raman stress mapping technique could also be readily applied to Ge electrodes, with two advantages: (1) Ge has the same crystal symmetry and Raman activity as Si, and the Raman shift–stress relationship has been explored; (2) Ge has potential applications as a Li-ion battery electrode , with a slightly higher potential (0.4–0.2 V vs Li/Li + ) than Si, which would allow for deeper depth of discharge with less SEI formation. A promising extension of this work would be a similar analysis of the stress profile and ECM coupling effects in Ge thin-film island electrodes.…”
Section: Discussionmentioning
confidence: 99%
“…Porous semiconductor materials have received an increasing interest for both fundamental research and advanced applications owing to their unique mechanical and physicochemical properties compared to their bulk material counterparts. [ 1–4 ] Porous germanium (PGe) in particular shows a potential in wide range of implementations such as energy storage systems, [ 5–10 ] thermoelectric devices, [ 11 ] sensors, [ 12–14 ] optoelectronics, [ 15,16 ] or synthesis of nanocomposite materials. [ 17–19 ] Moreover, PGe has recently been demonstrated as an efficient virtual substrate for epitaxial growth of detachable Ge membranes [ 20 ] and III‐V heterostructures with high crystalline quality [ 21,22 ] paving the way to direct application in the development of lightweight and flexible photovoltaics and optoelectronics.…”
Section: Introductionmentioning
confidence: 99%
“…
a potential in wide range of implementations such as energy storage systems, [5][6][7][8][9][10] thermoelectric devices, [11] sensors, [12][13][14] optoelectronics, [15,16] or synthesis of nanocomposite materials. [17][18][19] Moreover, PGe has recently been demonstrated as an efficient virtual substrate for epitaxial growth of detachable Ge membranes [20] and III-V heterostructures with high crystalline quality [21,22] paving the way to direct application in the development of lightweight and flexible photovoltaics and optoelectronics.
…”
mentioning
confidence: 99%
“…To overcome the challenges, several efforts have been made by fabricating nanoparticles, nanocomposites, porous structures, electrolyte additives, novel binders, and nanostructures (e.g., nanotubes, nanowires). Among the strategies, Ge nanostructures have been proven to be more effective in achieving high capacity, high-rate capability, and long cycle life. , This is because nanostructures are capable of reducing the volume strain, providing facile electron transport and shorter Li-ion diffusion length, and having a high interfacial surface area accessible to the electrolyte. , Accordingly, various synthesis methods for Ge nanostructures have been reported such as chemical vapor deposition, laser ablation, and radio frequency sputtering. Unfortunately, these techniques engage high temperatures, high vacuum conditions, and expensive instruments, making them unsuitable for the development of LIBs. On the contrary, electrochemical methods are promising alternatives for fabricating Ge nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…31−33 Among the strategies, Ge nanostructures have been proven to be more effective in achieving high capacity, high-rate capability, and long cycle life. 34,35 This is because nanostructures are capable of reducing the volume strain, providing facile electron transport and shorter Li-ion diffusion length, and having a high interfacial surface area accessible to the electrolyte. 36,37 Accordingly, various synthesis methods for Ge nanostructures have been reported such as chemical vapor deposition, laser ablation, and radio frequency sputtering.…”
Section: ■ Introductionmentioning
confidence: 99%