MXenes are a large family of two-dimensional
materials
with a general
formula M
n+1X
n
T
z
, where M is a transition metal, X
= C and/or N, and T
z
represents surface
functional groups. MXenes are synthesized by etching A-elements from
layered MAX phases with a composition of M
n+1AX
n
. As over 20 different chemical elements
were shown to form A-layers in various MAX phases, we propose that
they can provide an abundant source of very diverse MXene-based materials.
The general strategy for A-modified MXenes relies on the synthesis
of M
n+1A′1–x
A″
x
X
n
MAX phase, in which the higher reactivity of the
A′-element compared to that of A″ enables its selective
etching, resulting in A″-modified M
n+1X
n
T
z
. In
general, the A″-element could modify the interlayer spaces
of MXene flakes in a form of metallic or oxide species, depending
on its chemical identity and synthetic conditions. We demonstrate
this strategy by synthesizing Sn-modified Ti3C2T
z
MXene from the Ti3Al0.75Sn0.25C2 MAX phase, which was used
as a model system. Although the incorporation of Sn in the A-layer
of Ti3AlC2 decreases the MAX phase reactivity,
we developed an etching procedure to completely remove Al and produce
Sn-modified Ti3C2T
z
MXene. The resulting MXene sheets were of very high quality and
exhibited improved environmental stability, which we attribute to
the effect of a uniform Sn modification. Finally, we demonstrate a
peculiar electrostatic expansion of Sn-modified Ti3C2T
z
accordions, which may find
interesting applications in MXene-based nano-electromechanical systems.
Overall, these results demonstrate that in addition to different combinations
of M and X elements in MAX phases, an A-layer also provides opportunities
for the synthesis of MXene-based materials.