BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

Won, Sung Sik; Kawahara, Masami; Kuhn, Lindsay; Venugopal, Vineeth; Kwak, Jooyoung; Kim, Ill Won; Kingon, Angus I.; Kim, Seung Hyun

doi:10.1063/1.4980113

Cited by 60 publications

(28 citation statements)

References 23 publications

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“…The energy storage performance of the samples in this study can be expressed by (η, W rev ), for example, (81.3%, 63.7) has been obtained for PZT/AO/PZT opposite double‐heterojunction annealed at 550 °C. The comparison diagram of the energy storage performance is given in Figure for the representative thin films materials, such as polymer thin films, lead‐based thin films, lead‐free thin films . It can be observed that it is difficult to obtain high energy storage density and high efficiency simultaneously.…”

Section: Resultsmentioning

confidence: 99%

“…Among the currently available electrical energy storage devices, such as batteries, supercapacitors, and dielectric capacitors, the dielectric capacitors exhibit the advantages of fast charge–discharge capability and high power density . According to the different polarization behavior of dielectric materials, the representative dielectric capacitors can be classified as linear dielectric capacitors, antiferroelectric capacitors, and ferroelectric capacitors . Most importantly, energy storage density and energy storage efficiency are two key factors for the performances of energy storage capacitors.…”

Section: Introductionmentioning

confidence: 99%

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High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

Zhang

Zhao

et al. 2018

Adv Funct Materials

130

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In this study, the excellent energy storage performance is achieved by constructing opposite double-heterojunction ferroelectricity-insulator-ferroelectricity configuration. The PbZr 0.52 Ti 0.48 O 3 films and Al 2 O 3 films are chosen as the ferroelectricity and insulator, respectively. The microstructures, polarization behaviors, breakdown strength, leakage current density, and energy storage performance are investigated systematically of the constructed PbZr 0.52 Ti 0.48 O 3 /Al 2 O 3 /PbZr 0.52 Ti 0.48 O 3 opposite double-heterojunction. The ultrahigh electric field breakdown strength (≈5711 kV cm −1 ) is obtained, which is beneficial to achieve high energy storage density. Meanwhile, the high linearity of hysteresis loops with low energy dissipation is obtained at a proper annealing temperature, which is induced by partially crystallized and is in favor of achieving high energy storage efficiency η. The PbZr 0.52 Ti 0.48 O 3 / Al 2 O 3 /PbZr 0.52 Ti 0.48 O 3 annealed at 550 °C exhibits excellent energy storage performance with a storage density of 63.7 J cm −3 and efficiency of 81.3%, which is ascribed to the synergetic effect of electric breakdown strength (E BDS = 5711 kV cm −1 ) and the polarization (P m -P r = 23.74 µC cm −2 ). The proposed method in this study opens a new door to improve the energy storage performance of inorganic ferroelectric capacitors. Keywords breakdown strength, energy storage, heterojunctions, polarization behavior

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

Zhang

Zhao

et al. 2018

Adv Funct Materials

130

View full text Add to dashboard Cite

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“…As reported, not only dielectric breakdown but also dielectric polarization is dominant to energy storage performances in dielectrics . Until now, some Bi‐based materials suitable for energy storage were reported by researchers, such as sodium bismuth titanate, bismuth zinc niobate (cubic pyrochlore structure) and BiFeO 3 . Li et al reported recoverable energy storage density of 13.02 ± 0.39 J/cm 3 in 0.9 (Bi 0.5 Na 0.5 )TiO 3 ‐0.1 PbTiO 3 thin film.…”

Section: Introductionmentioning

confidence: 97%

A novel lead‐free bismuth magnesium titanate thin films for energy storage applications

et al. 2019

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Bismuth magnesium titanate thin films were prepared on platinized silicon wafers via modified sol-gel deposition method. Highly dense samples with pseudo-cubic structure were obtained under proper thermal treatment technique. Electric breakdown strength was dependent on annealing temperature which resulted in the variation of energy storage performances. The optimal charged energy storage density W c~4 7.8J/cm 3 and recoverable energy storage density W reco~2 6.0 J/cm 3 of the 640°C annealed films at 100 Hz were achieved, respectively. This dielectric film can be a promising candidate for high voltage lead-free energy storage applications due to their excellent performances. K E Y W O R D Sbismuth magnesium titanate, energy storage, sol-gel

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“…The smooth surface of the films is obtained, which is confirmed by few defects and the uniform particle size. Such homogeneous film surface originates from the addition of BMO that inhibits the growth of grain, decreases the grain size, then forms dense surface morphology . This uniform surface is also an important reason for excellent electrical properties.…”

mentioning

confidence: 99%

High Energy Storage Efficiency with Fatigue Resistance and Thermal Stability in Lead‐Free Na_0.5K_0.5NbO₃/BiMnO₃ Solid‐Solution Films

Sun

Zhou

et al. 2017

Physica Rapid Research Ltrs

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The ferroelectric, leakage, dielectric, and energy storage properties of leadfree Na 0.5 K 0.5 NbO 3 /BiMnO 3 (KNN/BMO) solid-solution films are investigated. The strong ferroelectric relaxation behaviors of slim ferroelectricity with small remanent polarization and coercive field induce a high energystorage density and efficiency at room temperature. The energy density reaches 14.8 J cm À3 , even the efficiency is up to 79.79% under the applied electric field of 985.66 kV cm À1 . Moreover, the energy storage performances of KNN/BMO solid-solution films exhibit good thermal stability over a wide temperature range and high ferroelectric fatigue endurance after switching 10 6 bipole electrical cycles. KNN/BMO solid-solution films can replace leadbased films and other outstanding lead-free systems in the energy storage performance.As a key component of pulse power equipment, pulsed capacitors need to withstand a high discharge current in a short period of time and thousands of charge and discharge lifetimes. [1,2] Therefore, capacitor storage has become the focus of research because of its highest power, efficiency, few limited conditions, and simple structure. With the development of new pulse system toward high energy, miniaturization, the most effective way to improve the efficiency of pulsed system is adopted to improve the performances of capacitor materials. The typical dielectric materials including linear dielectric materials, ferroelectric materials, antiferroelectric materials, and relaxor ferroelectrics can meet the requirements for such materials. [3,4] Classically, energy storage density of dielectric capacitors is calculated according to the following formula [3] :where E and P are applied electric field and the corresponding polarization during charge process. During discharge process, applied electric field is gradually withdrawn from the maximum to zero, and recoverable energy storage density (W rec ) is released, which obeys the following equation:The loss energy density (W loss ¼ W -W rec ) is caused by hysteresis loss. Therefore, the energy storage efficiency (η) can be calculated by the equationAs discussed above, large polarization changes (i.e., slim hysteresis loops) and high breakdown electric fields are required to obtain high W rec . Thus, relaxor ferroelectrics (REF) are considered as promising materials for energy storage devices, due to their high saturation polarization (P s ), low remanent polarization (P r ), and ultrahigh storage efficiency η.Compared with bulk materials, films endow lower size, higher breakdown electrical field, and energy storage efficiency, which can be applied to microelectronic devices.Recently, more and more researchers have paid attention to Na 0.5 K 0.5 NbO 3 (KNN) lead-free ferroelectrics as substitutes for lead-based materials in energy storage due to environmental friendliness. Up to now, a great deal of research has focused on the energy storage of KNN-based ceramics. [5][6][7] However, little attention has been paid to the energy storage performances of...

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BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

Cited by 60 publications

References 23 publications

High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

A novel lead‐free bismuth magnesium titanate thin films for energy storage applications

High Energy Storage Efficiency with Fatigue Resistance and Thermal Stability in Lead‐Free Na_0.5K_0.5NbO₃/BiMnO₃ Solid‐Solution Films

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BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

Cited by 60 publications

References 23 publications

High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

A novel lead‐free bismuth magnesium titanate thin films for energy storage applications

High Energy Storage Efficiency with Fatigue Resistance and Thermal Stability in Lead‐Free Na0.5K0.5NbO3/BiMnO3 Solid‐Solution Films

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High Energy Storage Efficiency with Fatigue Resistance and Thermal Stability in Lead‐Free Na_0.5K_0.5NbO₃/BiMnO₃ Solid‐Solution Films