High Energy Storage Performance of Opposite Double‐Heterojunction Ferroelectricity–Insulators

Abstract

In this study, the excellent energy storage performance is achieved by constructing opposite double-heterojunction ferroelectricity-insulator-ferroelectricity configuration. The PbZr 0.52 Ti 0.48 O 3 films and Al 2 O 3 films are chosen as the ferroelectricity and insulator, respectively. The microstructures, polarization behaviors, breakdown strength, leakage current density, and energy storage performance are investigated systematically of the constructed PbZr 0.52 Ti 0.48 O 3 /Al 2 O 3 /PbZr 0.52 Ti 0.48 O 3 opposite double-heterojunction. The ultrahigh electric field breakdown strength (≈5711 kV cm −1 ) is obtained, which is beneficial to achieve high energy storage density. Meanwhile, the high linearity of hysteresis loops with low energy dissipation is obtained at a proper annealing temperature, which is induced by partially crystallized and is in favor of achieving high energy storage efficiency η. The PbZr 0.52 Ti 0.48 O 3 / Al 2 O 3 /PbZr 0.52 Ti 0.48 O 3 annealed at 550 °C exhibits excellent energy storage performance with a storage density of 63.7 J cm −3 and efficiency of 81.3%, which is ascribed to the synergetic effect of electric breakdown strength (E BDS = 5711 kV cm −1 ) and the polarization (P m -P r = 23.74 µC cm −2 ). The proposed method in this study opens a new door to improve the energy storage performance of inorganic ferroelectric capacitors. Keywords breakdown strength, energy storage, heterojunctions, polarization behavior

Review of Polymer‐Based Nanodielectric Exploration and Film Scale‐Up for Advanced Capacitors

“…Great progresses have been made in capacitors that are made of ferroelectric/dielectric thin films requiring substrates, ceramic thick layers requiring multilayer ceramic‐co‐fired (MLCC), and polymeric dielectric materials requiring free‐standing films. The scope of these researches is very broad and many were reviewed elsewhere already . Therefore, this report does not include thin film subject and MLCC subject.…”

High‐recoverable energy‐storage density and dielectric tunability in Eu3+‐doped NBT‐xSTO binary solid solution films

“…Electrical energy storage devices, such as electrochemical capacitors, dielectric capacitors, and batteries, have been extensively investigated due to their wide applications in advanced electrical power systems . Among these electrochemical energy storage devices, and dielectric capacitors play an important role in high‐power applications because of their fast charge‐discharge speed . However, the energy density of dielectric ceramic capacitors is lower than that of electrochemical energy storage devices .…”

“…Thus, the thin film capacitors prepared on Pt/Ti/SiO 2 /Si substrates were cost‐effective and beneficial to be integrated, therefore captured more researcher's attentions. It has been reported by Zhang et al that the excellent energy storage performance ( W r = 63.7 J cm −3 , η = 81.3%) was achieved in PbZr 0.52 Ti 0.48 O 3 /Al 2 O 3 /PbZr 0.52 Ti 0.48 O 3 thin film prepared on Pt/Ti/SiO 2 /Si substrate by sol‐gel method . However, in the future, lead, toxic element, will be seriously limited to be used in devices due to it is harmful to environment and human body.…”

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“…Thus, the thin film capacitors prepared on Pt/Ti/SiO 2 /Si substrates were cost-effective and beneficial to be integrated, therefore captured more researcher's attentions. It has been reported by Zhang 4 However, in the future, lead, toxic element, will be seriously limited to be used in devices due to it is harmful to environment and human body. Therefore, for the view of environmental protection, lead-free materials with high energy storage performances, which may be able to meet the needs of large-scale production, have been researchers' favorite in recent years.…”