BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

Monroy, A.; Laurens, W.; Marty, M.; Dutartre, D.; Gloria, D.; Carbonero, J.L.; Perrotin, A.; Roche, Michel; Chantre, A.

doi:10.1109/bipol.1999.803540

Cited by 17 publications

(5 citation statements)

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“…The size of the link base determines the difference in collector and emitter areas and hence impacts both the C/B capacitance and the base resistance. In SiGe technologies employing differential epitaxy [5]- [7], the link base is formed at the perimeter of the active area where the single-crystal base intersects the polycrystalline extrinsic base over the field oxide. In SiGe technologies employing selective growth (SEG) [8]- [11], the link base is formed by the growth of polycrystalline material on a predefined, overhanging p polysilicon extrinsic base.…”

mentioning

confidence: 99%

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Lukyanchikova

Garbar

Petrichuk

et al. 2001

IEEE Trans. Electron Devices

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A study is made of 1 noise in SiGe heterojunction bipolar transistors (HBTs) fabricated using selective growth (SEG) of the Si collector and nonselective growth (NSEG) of the SiGe base and Si emitter cap. The transistors incorporate a self-aligned link base formed by BF 2 implantation into the field oxide below the p + polysilicon extrinsic base. The influence of this BF 2 implant on the 1 noise is compared with that of a F implant into the polysilicon emitter. Increased base current noise S IB and base current are seen in transistors annealed at 975 C, compared with transistors annealed at 950 or 900 C. At a constant collector current, both the BF 2 and F implants reduce S IB , whereas at a constant base current, only the BF 2 implant reduces S IB. This result indicates that the BF 2 implant decreases the intensity of the base current noise source whereas the F implant decreases the base current. The proposed explanation for the increased 1 noise is degradation of the surface oxide by viscous flow at 975 C under the influence of stress introduced during selective Si epitaxy. The influence of the BF 2 implant on the noise is explained by the relief of the stress and hence the prevention of viscous oxide flow.

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mentioning

confidence: 99%

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Lukyanchikova

Garbar

Petrichuk

et al. 2001

IEEE Trans. Electron Devices

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“…A differential LC oscillator operating at 10 GHz, based on the topology reported in Figure 2, is designed using the BiCMOS6G SiGe monolithic process from STMicroelectronics [21]. The fully integrated LC resonator offers the advantages of low cost and reduced sensitivity to packaging parasitics with respect to the use of an external tank; as a drawback, a lower quality factor due to losses in on-chip spiral inductors is obtained.…”

Section: A Case Studymentioning

confidence: 99%

Behavioral model of a noisy VCO for efficient time‐domain simulation

Centurelli

Ercolani

Scotti

et al. 2004

Micro & Optical Tech Letters

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superior isolation performance of the mixers is attributed to the precise control of the length for each stub in the circuit, as well as the APDP's antisymmetric characteristic of mixing a more stable quarter frequency of the fundamental signal. CONCLUSIONA high-performance V-band quadruple subharmonic MIMIC mixer circuit has been proposed and demonstrated in this work for millimeter-wave down-converter applications. The proposed subharmonic mixers show good conversion-gain and isolation characteristics. The fabricated circuits operate in an RF frequency range of 58. 4 -62.4 GHz at an IF frequency of 2.4 GHz, and in an LO frequency range of 14 -15 GHz. An excellent conversion gain of 0.8 dB is obtained at an LO frequency of 14.5 GHz and an LO power of 12 dBm. Regarding the operation frequency range of the mixers, both LO-to-RF and LO-to-IF isolations are higher than 50 dB. BEHAVIORAL MODEL OF A NOISY VCO FOR EFFICIENT TIME-DOMAIN SIMULATION

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“…The main feature of the baseline process is the non-selective Si/Si 1Àx Ge x epitaxy, which is used to form the intrinsic base layer of the NPN and the poly-Si base electrode in a single step [16]. The epitaxy is carried out at 650°C using H 2 /SiH 4 /GeH 4 /B 2 H 6 chemistry, so that the NPN base is heavily boron-doped Si 1Àx Ge x .…”

Section: Process Integration and Proposed Devicementioning

confidence: 99%

Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process

Khare

Schroder

Sampson

2007

Solid-State Electronics

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BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

Cited by 17 publications

References 1 publication

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Behavioral model of a noisy VCO for efficient time‐domain simulation

Design and optimization of a buried channel PMOS integrable in a Si1−xGex BiCMOS process

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