Bi2Se3 Hall Effect Magnetometer for Reliable Low Temperature Use

Abstract

Single crystals of n-type Bi2Se3 grown by the Bridgman technique are found to make excellent Hall effect magnetometers capable of repeated cycling to liquid helium temperatures. Plots of Hall resistivity, Pyx, versus magnetic field B to 11 tesla deviate from linearity by less than ±0.8% for all temperatures between 1.1 and 300 K. Furthermore, the slope of the Pyx versus B curve varies by less than 2% in the region 1.1 to 78 K.

Synthesis of Bi2Se3 Nanosheets by Microwave Heating Using an Ionic Liquid

“…Bi 2 Se 3 is a narrow-gap layered semiconductor with the tetradymite structure. The study on the electronic structure of Bi 2 Se 3 indicates that Bi 2 Se 3 is suitable for application in optical and photosensitive devices. − There have been reports on the synthesis of Bi 2 Se 3 nanofilms, , nanoparticles, , heterostructured nanowires, nanobelts, and nanotubes by a variety of methods such as chemical deposition, solvothermal, sonochemical, template, and ultraviolet irradiation methods.…”

Deposition of Bismuth Chalcogenide Thin Films Using Novel Single-Source Precursors by Metal-Organic Chemical Vapor Deposition

“…Bismuth selenide is a V/VI semiconductor with a band gap of ca. 0.3 eV, , which is suitable for applications in optical and photosensitive devices, in photoelectrochemical (PEC) cells, in solar-selective decorative coatings, and in the fabrication of an ideal Hall effect magnetometer. − Films of Bi 2 Se 3 have previously been prepared by chemical bath deposition (CBD), − electrodeposition, molecular jet, successive ionic layer adsorption and reaction (SILAR) , methods, and melting together high-purity bismuth and selenium under vacuum …”

“…0.3 eV, 1,2 which is suitable for applications in optical and photosensitive devices, in photoelectrochemical (PEC) cells, in solar-selective decorative coatings, and in the fabrication of an ideal Hall effect magnetometer. [3][4][5] Films of Bi 2 Se 3 have previously been prepared by chemical bath deposition (CBD), [6][7][8] electrodeposition, 9 molecular jet, 10 successive ionic layer adsorption and reaction (SILAR) 11,12 methods, and melting together high-purity bismuth and selenium under vacuum. 13 Bismuth sulfide has a direct band gap of 1.3 eV 14 and has been the subject of significant research in recent years due to its potential for use in photodiode arrays, 15 thermoelectric coolers, 16 and photoelectrochemical cells.…”

Charge transport mechanism of Al/Bi2Te3/Al thin film devices

“…Many workers have been attempted to improve the thermoelectric properties of Bi 2 Te 3 based alloys [8][9][10]. The application of these materials is extended to fabricate ideal Hall effect magnetometer, high frequency power sensors thermopiles and wide band radiation detectors [11]. From the measurements of the conductivity, the thermoelectric power and the magnetic susceptibility, Honda and Sone [12] and Endo [13] have found that the inter metallic compound Bi 2 Te 3 exists and Haken [14] has reported that the compound Bi 2 Te 3 is of p-type from the measurement of the Hall effect at room temperatures and Moss [15] has investigated the photoconductivity.…”