Charge transport mechanism of Al/Bi2Te3/Al thin film devices

As a three-dimensional topological insulator (TI), bismuth telluride (Bi2Te3) has two-dimensional electron gas on its surface where negative quantum capacitance (NQC) can exist at a specific biasing condition. In order to experimentally confirm NQC in a TI, a metal–insulator–semiconductor (MIS) capacitor (i.e., metal–Bi2Te3–SiO2–silicon) is fabricated. The capacitance–voltage measurement of the MIS capacitor at 300 K shows that as the depletion capacitance in silicon decreases, the total capacitance of the MIS capacitor, which consists of two capacitors connected in series (i.e., insulator capacitor and depletion capacitor), increases in the depletion region at a frequency of 50 kHz. The amplified capacitance indicates the existence of NQC on the surface of the TI, and it originates from the strongly correlated electron system. The NQC of the TI opens avenues for sub-60-mV/decade steep switching silicon devices.

show abstract

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Choi

Lee

Park

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Thickness dependence of the dielectric properties of thermally evaporated Sb₂Te₃thin films

Deǧer

Yakut

2013

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Charge transport mechanism of Al/Bi2Te3/Al thin film devices

Cited by 2 publications

References 27 publications

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Thickness dependence of the dielectric properties of thermally evaporated Sb₂Te₃thin films

Contact Info

Product

Resources

About

Charge transport mechanism of Al/Bi2Te3/Al thin film devices

Cited by 2 publications

References 27 publications

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device

Thickness dependence of the dielectric properties of thermally evaporated Sb2Te3thin films

Contact Info

Product

Resources

About

Thickness dependence of the dielectric properties of thermally evaporated Sb₂Te₃thin films