Thickness dependence of the dielectric properties of thermally evaporated Sb<sub>2</sub>Te<sub>3</sub>thin films

Deǧer, D.; Yakut, Şahin

doi:10.1088/1742-6596/417/1/012040

Cited by 15 publications

(12 citation statements)

References 25 publications

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“…The shape of the curves on the dependence -lоg max =(1/T) allows determination of the type of polarization the processes under study are dipole relaxation processes. This conclusion is consistent with the results of [13], who also discovered the existence of dipole-relaxation polarization in the same frequency range.…”

Section: Resultssupporting

confidence: 93%

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Кононов

Castro

Saito

et al. 2021

Preprint

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Sb2Te3 is an end-point of the GeTe-Sb2Te3 quasibinary tie-line that represents phase-change alloys widely used in optical and non-volatile phase-change memory devices. In the crystalline form it is also a prototypical topological insulator with a layered structure where covalently bonded quintuple layers are held together by weak van der Waals forces. One of the ways to fabricate a crystalline phase is solid-state crystallisation of an amorphous film, whereby the three-dimensional (3D) structure relaxes to the two-dimensional (2D) crystalline phase. The mechanism of the 3D-2D transformation remains unclear. In this work, we performed a study of relaxation processes in thin Sb2Te3 films in both amorphous and crystalline phases. We found that both phases possess two kinds of relaxators (type I and type II), where the type I fragments are identical in the two phases, while the relaxation of type II fragments are shifted to lower temperature in the amorphous phases. The activation energies of the associated relaxation processes and the values of the Havriliak-Negami parameters were determined. The differences between the relaxation processes in the two phases are discussed. The obtained result will contribute to better understanding of the 3D-2D transformation during the crystallisation of van der Waals solids.

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Section: Resultssupporting

confidence: 93%

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Кононов

Castro

Saito

et al. 2021

Preprint

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“…In our case we found that the values of parameter s are (0.83 ± 0.03) for series A and (0.95 ± 0.02) for series B, that is, it takes high values for two series over the whole range of frequencies investigated. According to the correlated barrier hopping (CBH) model, the values of the exponent s are ranged from 0.7 to 1, at room temperature . This is in good agreement with the obtained results, so the frequency dependence of AC conductivity can be explained in terms of hopping of electrons over the potential barrier separating the localized states at the Fermi level of two adjacent carbon black atoms separated by an interphase region and polymeric phase.…”

Section: Resultssupporting

confidence: 84%

Prediction of filler/matrix interphase effects on AC and DC electrical properties of carbon reinforced polymer composites

et al. 2017

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This study predicts the effect of the conducting filler/ insulating matrix interphase on the electrical properties of two series of percolated systems, differing from the type of carbon black particles mixed in an aminecured epoxy matrix, diglycidylic ether of bisphenol F. To take into account the interactions between the conducting filler and the matrix, as well as filler-filler overlapping, we introduce three parameters, characteristic of the interphase zone, such as concentration, conductivity and volume, on the generalized effective medium (GEM) model for DC and AC electrical conductivities. These interphase parameters, characterizing the boundary of the shaded zone between the macromolecular chain and the conducting particles, depend on the filler type and concentration. One output of GEM-modified model is that it provides a mean to estimate the volume, concentration and intrinsic conductivity of the interphase in a composite by fitting the experimental data over a broad range of frequency.

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“…While the structure and electronic properties of Sb 2 Te 3 have been thoroughly investigated, studies of its dielectric properties have been rather limited. The dielectric properties of thermally evaporated Sb 2 Te 3 thin films have been investigated in [13,14] but to date there have been no reports on comparative studies of the amorphous and crystalline phases. Such a study would foster a significant interest because amorphous film possesses a three-dimensional (3D) structure, while the dimensionality is changed to 2D in the crystalline phase.…”

Section: Introductionmentioning

confidence: 99%

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Кононов

Castro

Saito

et al. 2021

J Mater Sci: Mater Electron

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Sb 2 Te 3 is an end-point of the GeTe-Sb 2 Te 3 quasibinary tie-line that represents phase-change alloys widely used in optical and non-volatile phase-change memory devices. In the crystalline form it is also a prototypical topological insulator with a layered structure where covalently bonded quintuple layers are held together by weak van der Waals forces. One of the ways to fabricate a crystalline phase is solid-state crystallisation of an amorphous film, whereby the three-dimensional (3D) structure relaxes to the two-dimensional (2D) crystalline phase. The mechanism of the 3D-2D transformation remains unclear. In this work, we performed a study of relaxation processes in thin Sb 2 Te 3 films in both amorphous and crystalline phases. We found that both phases possess two kinds of relaxators (type I and type II), where the type I fragments are identical in the two phases, while the relaxation of type II fragments are shifted to lower temperature in the amorphous phases. The activation energies of the associated relaxation processes and the values of the Havriliak-Negami parameters were determined. The differences between the relaxation processes in the two phases are discussed. The obtained result will contribute to better understanding of the 3D-2D transformation during the crystallisation of van der Waals solids.

show abstract

Thickness dependence of the dielectric properties of thermally evaporated Sb₂Te₃thin films

Cited by 15 publications

References 25 publications

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Prediction of filler/matrix interphase effects on AC and DC electrical properties of carbon reinforced polymer composites

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

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Thickness dependence of the dielectric properties of thermally evaporated Sb2Te3thin films

Cited by 15 publications

References 25 publications

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Prediction of filler/matrix interphase effects on AC and DC electrical properties of carbon reinforced polymer composites

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

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Product

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Thickness dependence of the dielectric properties of thermally evaporated Sb₂Te₃thin films