BGaAs strain compensation layer in novel BGaAs/InGaAs/BGaAs heterostructure: Exceptional tunability

Hidouri, Tarek; Nasr, Samia; Mal, Indranil; Samajdar, Dip Prakash; Saidi, F.; Hamila, R.; Maâref, H.

doi:10.1016/j.apsusc.2020.146573

Cited by 7 publications

(5 citation statements)

References 23 publications

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“…The composition fluctuations due to ion migration also induce the strain and electric field that can split the conduction and valence band into subbands. 46,47 Inhomogeneity in bulk or interface of non-radiative recombination in the perovskite layer is considered to explain an increase in V OC. 24,49,50 According to the presented model, the electrical field distribution of the cells affects the carrier recombination.…”

Section: Resultsmentioning

confidence: 99%

“…Previous studies show that composition fluctuation and impurity level can increase the FWHM. The broadening width of the PL peak is due to surface defects and the composition fluctuations originating from the interfacial perovskite surface, where the localization phenomenon is increased 46 . The recombining electron‐hole pairs can be trapped by the crystal imperfections and surface defects.…”

Section: Resultsmentioning

confidence: 99%

“…The localized states in perovskite act as a trap center and decrease the charge recombination at the perovskite interfaces. The composition fluctuations due to ion migration also induce the strain and electric field that can split the conduction and valence band into sub‐bands 46,47 . Inhomogeneity in bulk or interface of perovskite cause fluctuation in PL spectra due to inducing the trap levels in the bandgap.…”

Section: Resultsmentioning

confidence: 99%

“…The broadening width of the PL peak is due to surface defects and the composition fluctuations originating from the interfacial perovskite surface, where the localization phenomenon is increased. 46 The recombining electron-hole pairs can be trapped by the crystal imperfections and surface defects. The localized states in perovskite act as a trap center and decrease the charge recombination at the perovskite interfaces.…”

Section: Theory and Modelmentioning

confidence: 99%

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New insight on the open‐circuit voltage of perovskite solar cells: The role of defect‐density distribution and electric field in the active layer

Zarabinia

Rasuli

Mohajerani

2020

Intl J of Energy Research

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In this article, we study the J-V characteristic of a perovskite solar cell (PSC) prepared by the two-step method. PSCs were fabricated by methylammonium lead iodide using the sequential deposition method. We describe J-V curves using a modified dynamic electrical model based on an asymmetric electric field. In addition, we simulated the PSCs by solar cell capacitance simulator package to investigate the role of trap-density distribution in cell performance. The experimentally optimized device shows an enhancement in the opencircuit voltage (V OC) from 1.08 to 1.21 V. Simulation results show that the increase in V OC up to 1.15 V is corresponding to a trap-density of 2.38×10 15 cm −3. However, these results predict that a decrease in the trapdensity can increases the V OC and FF up to 1.19 V and 79% while the modified dynamic electrical model gives the J-V characteristic as well as experimental results. Our results suggest that the increase in V OC can be attributed to the asymmetric electric field at the interface of the perovskite layer.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Theory and Modelmentioning

confidence: 99%

See 2 more Smart Citations

New insight on the open‐circuit voltage of perovskite solar cells: The role of defect‐density distribution and electric field in the active layer

Zarabinia

Rasuli

Mohajerani

2020

Intl J of Energy Research

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“…Moreover, the substitution of gallium with boron atoms leads to the lattice contraction of host materials, which is well established [2,5,9,11,14,18]. The decrease of lattice constant and insignificant change of energy gap with increasing boron concentration makes BGaAs a perfect candidate for strain engineering, particularly for tensile strain compensation [19].…”

Section: Introductionmentioning

confidence: 98%

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

Kopaczek¹,

Dybała²,

Zelewski³

et al. 2021

J. Phys. D: Appl. Phys.

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BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance (PR) spectroscopy with both temperature and hydrostatic pressure dependence. The direct optical transitions from the bands composing the valence band—namely heavy-hole, light-hole, and spin–orbit split-off—to the conduction band are clearly observed in the PR spectra. For the abovementioned optical transitions, their temperature dependencies are obtained in the range from 20 K to 300 K, and analyzed by Varshni and Bose–Einstein relations. Furthermore, the BGaAs alloys are also studied with hydrostatic pressure up to ∼18 kbar, revealing pressure coefficients of direct optical transitions. The obtained results are discussed within the framework of the band anticrossing model and chemical trends.

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Tuning spontaneous emission in BInGaAs/GaAs QWs by varying the growth temperature: above 1.2 µm emission and solar cells application

2021

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BGaAs strain compensation layer in novel BGaAs/InGaAs/BGaAs heterostructure: Exceptional tunability

Cited by 7 publications

References 23 publications

New insight on the open‐circuit voltage of perovskite solar cells: The role of defect‐density distribution and electric field in the active layer

New insight on the open‐circuit voltage of perovskite solar cells: The role of defect‐density distribution and electric field in the active layer

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

Tuning spontaneous emission in BInGaAs/GaAs QWs by varying the growth temperature: above 1.2 µm emission and solar cells application

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