Tuning spontaneous emission in BInGaAs/GaAs QWs by varying the growth temperature: above 1.2 µm emission and solar cells application

Hidouri, Tarek; Saidi, F.; Al-Shahri, Badria M.

doi:10.1007/s11082-021-03160-y

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…A basic formulation of the band-tail-state model was created by Eliseev et al [ 22 , 23 ], and it was then developed into the PL model of the localized state ensemble by Li et al [ 24 ]. The model was used recently by Hidouri et al to quantitatively evaluate the temperature dependence of PL band features in ternary and quaternary epitaxial layers [ 25 , 26 , 27 ] and the respective quantum wells [ 28 ].…”

Section: Resultsmentioning

confidence: 99%

Mg Doping of N-Polar, In-Rich InAlN

et al. 2023

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Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10−3. The grain structure of 360 nm thick InAlN was spoiled by pits after introducing a flow of CP2Mg at 30 nmol/min. The surface quality was improved with a flow of 80 nmol/min; however, detrimental deterioration appeared at 130 nmol/min. This correlated with the XRD shape and determined density of dislocations, indicating a phase separation at the highest flow. Degenerated n-type conduction and a free carrier concentration of ~1019 cm−3 were determined in all samples, with a minor compensation observed at a CP2Mg flow of 30 nmol/min. The room temperature (RT) electron mobility of ~40 cm2/Vs of the undoped sample was reduced to ~6 and ~0.3 cm2/Vs with a CP2Mg flow of 30 and 80 nmol/min, respectively. Scattering at ionized acceptor/donor Mg-related levels is suggested. RT photoluminescence showed a red shift of 0.22 eV from the virgin 1.73 eV peak value with Mg doping. Mobility degradation was found to be the main factor by InAlN resistivity determination, which increased by two orders of magnitude, approaching ~0.5 Ωcm, at the highest Cp2Mg flow.

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Section: Resultsmentioning

confidence: 99%

Mg Doping of N-Polar, In-Rich InAlN

et al. 2023

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“…Many efforts have been taken to improve the quality of the In x Ga 1−x As epilayer. Some researchers used linear graded buffers to stop the propagation of dislocation and others took strained superlattice to engineer the strain field [14][15][16][17][18]. Compositionally step-graded buffers were also employed.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Xu²,

Wei

et al. 2021

Crystals

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The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.

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