New insight on the open‐circuit voltage of perovskite solar cells: The role of defect‐density distribution and electric field in the active layer

Abstract

In this article, we study the J-V characteristic of a perovskite solar cell (PSC) prepared by the two-step method. PSCs were fabricated by methylammonium lead iodide using the sequential deposition method. We describe J-V curves using a modified dynamic electrical model based on an asymmetric electric field. In addition, we simulated the PSCs by solar cell capacitance simulator package to investigate the role of trap-density distribution in cell performance. The experimentally optimized device shows an enhancement in the opencircuit voltage (V OC) from 1.08 to 1.21 V. Simulation results show that the increase in V OC up to 1.15 V is corresponding to a trap-density of 2.38×10 15 cm −3. However, these results predict that a decrease in the trapdensity can increases the V OC and FF up to 1.19 V and 79% while the modified dynamic electrical model gives the J-V characteristic as well as experimental results. Our results suggest that the increase in V OC can be attributed to the asymmetric electric field at the interface of the perovskite layer.

Simple and effective deposition method for solar cell perovskite films using a sheet of paper

“…As shown in Figure 7B, it was found that the charge-recombination lifetime of the DASSA device (with fall time of 135 ms) was much longer than that of the DASSA without antisolvent device (with fall time of 21 ms). The reduced charge recombination is promoted by optimized morphology such as interconnected grains and a low number of pinholes as supported by the SEM/XRD images in the previous section as well as previous literature on transient measurements (Yu et al, 2016;Zarabinia et al, 2021;Tailor et al, 2020).…”

Double inorganic hole extraction layer of Cs: NiO x / CuInS 2 for efficiency and stability enhancement of perovskite solar cells

“…Compared with that of the PVK, the PL intensity of PVK/Cs:NiO x , PVK/CuInS 2, or PVK/Cs:NiO x /CuInS 2 is significantly weakened because CuInS 2 or Cs:NiO x /CuInS 2 can extract and transport carriers from PVK layer. Moreover, the PL intensity of the PVK/Cs:NiO x /CuInS 2 is less than the PVK/CuInS 2 , which demonstrates that double HEL of Cs:NiO x /CuInS 2 has stronger hole extraction and transport ability than the single HEL of CuInS 2 36‐38 …”

Stability study of large‐area perovskite solar cells fabricated with copper as low‐cost metal contact

“…The intersite defects arise from the replacement of MA, Pb, and I ions, which lead to a variation in the open‐circuit voltage of the device as seen in Figure 7F. Open circuit voltage is high at low defect density, and V OC is very poor at high defect density (0.2 V at 10 19 cm −3 ) and further reduces to zero at N d = 10 20 cm −3 51 . The details are shown in Tables S5 and S6.…”

“…Open circuit voltage is high at low defect density, and V OC is very poor at high defect density (0.2 V at 10 19 cm À3 ) and further reduces to zero at N d = 10 20 cm À3 . 51 The details are shown in Tables S5 and S6.…”