1967
DOI: 10.1007/bf01326574
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�ber Zusammenh�nge zwischen Elektronenspinresonanz, elektrischer Leitf�higkeit und Photoleitung bei reinem und dotiertem Bor

Abstract: The conductivity mechanism in pure and doped, fl-rhombohedral, polycrystalline boron between 1.5 ~ and 900 ~ is clarified by measurements of electrical conductivity, photoconductivity, electron paramagnetic resonance and thermoelectric effect. The semiconductor behaviour of boron between 1.5 and 900 ~ is similar to that of doped and compensated germanium and silicon at helium temperatures concerning the temperature-independent number of carriers and the thermally activated conduction process at low and high ca… Show more

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Cited by 56 publications
(15 citation statements)
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“…The possible high mobility (10e100 cm 2 /V$sec. at 300 K) crystals are stoichiometric B 6 O, B 6 P, B 6 As and possibly B 6 S and B 12 C 3 .…”
Section: Crystal Chemistry Of A-b and Derivativesmentioning
confidence: 99%
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“…The possible high mobility (10e100 cm 2 /V$sec. at 300 K) crystals are stoichiometric B 6 O, B 6 P, B 6 As and possibly B 6 S and B 12 C 3 .…”
Section: Crystal Chemistry Of A-b and Derivativesmentioning
confidence: 99%
“…The temperature variation of the s of b-B with 8.5 atom% C from [6] has been published [14, see their Fig …”
Section: Beta-boron Thermoelectricsmentioning
confidence: 99%
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“…It is thus of interest to investigate, which places inside the unit cell an element like Co or Fe would occupy if incorporated as an impurity in the concentration range of less than 1 at yo. Some information of this type is available from EPR measurements [3]. However, these results are not fully conclusive and cannot be used to judge the quality of a source of 57C0 in B for the Mossbauer spectroscopy.…”
Section: Introductionmentioning
confidence: 97%