The conductivity mechanism in pure and doped, fl-rhombohedral, polycrystalline boron between 1.5 ~ and 900 ~ is clarified by measurements of electrical conductivity, photoconductivity, electron paramagnetic resonance and thermoelectric effect. The semiconductor behaviour of boron between 1.5 and 900 ~ is similar to that of doped and compensated germanium and silicon at helium temperatures concerning the temperature-independent number of carriers and the thermally activated conduction process at low and high carrier concentrations. The paramagnetic centres are nearly localized electrons at 1.5 ~ and nearly free electrons at 900 ~ with a continuous transition between these two extreme kinds of behaviour. Mobilities of charge carriers in carbon doped boron over a range from 1016 cm -3 to 1020 cm -3 and 77 ~ to 900 ~ were measured for the first time and were found to obey an exponential law.
-values, hyperfine splittings, and line widths of the EPR-spectra of phosphorus substituted into Sil-,Ge, alloys were investigated at, 9.3 GHz and 1.8 K in the range nntersucht. Die Abhiingigkeit der gemessenen GroBen von der Siliziumkonzentration wird anhand von Untersuchungen zur Bandstrnktur und im Hinblick auf die loknle Umgebung jedes Phosphoratoms diskutiert.
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