BEOL-Transistor Technology with InGaZnO channel for High/Low Voltage Bridging I/Os

Kaneko, K.; Inoue, N.; Sunamura, H.; Saito, Shinobu; Furutake, N.; Narihiro, M.; Kawahara, J.; Hane, M.; Hayashi, Yoshihiro

doi:10.7567/ssdm.2013.g-6-1

Cited by 3 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Note that, besides the sensor applications discussed here, InGaZnO TFTs have also been studied for use in some other electronic devices like power devices 61,62) and memory devices. 63,64) These devices also utilize some of the specific features of InGaZnO TFTs, i.e., larger bandgap and much lower OFF current in comparison with Si-based TFTs and FETs.…”

Section: Other Sensor Applications Of Ingazno Tftsmentioning

confidence: 99%

Sensor applications of InGaZnO thin-film transistors

Takechi¹,

Iwamatsu

2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This article reviews and discusses sensor applications of bottom-gate type InGaZnO thin-film transistors (TFTs). First, we discuss specific features of InGaZnO TFTs that differentiate them from Si-based TFTs, such as the significant capacitive coupling between the bottom-gate and top-gate electric fields and material properties such as carrier generation mechanism. Although flat-panel displays driven by InGaZnO TFTs have been developed, these features have not necessarily been utilized. Based on these features, next, we review and discuss possible chemical-sensor concepts of InGaZnO TFTs, like gas sensors, pH sensors, and biochemical sensors. We also cover possible physical-sensor concepts like photo sensors, temperature sensors, and electrostatic potential sensors. Regarding these sensor concepts, the passivation layer in the InGaZnO TFTs or the InGaZnO layer itself works as the sensitive membrane that responds to particular substances. These sensor concepts can provide a way to incorporate InGaZnO TFTs into a wide variety of sensor applications.

show abstract

Section: Other Sensor Applications Of Ingazno Tftsmentioning

confidence: 99%

Sensor applications of InGaZnO thin-film transistors

Takechi¹,

Iwamatsu

2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Demands for enhancing the device performance of oxide semiconductor thin-film transistors (TFTs) have been increasing in flat panel display (FPD) industries due to the technical needs for ultrahigh resolution, larger area, good form factor, and lower power consumption. − In particular, In–Ga–Zn–O (IGZO) has been mainly employed as a channel material for backplane TFTs of FPDs owing to its advantages such as low process temperature, superior electrical properties, and optical transparency along with amorphous characteristics. − Thus, the IGZO thin films have also been widely developed for various electronic device applications including flexible displays, , power devices, thermoelectrical devices, and nonvolatile memories. , The IGZO thin films have conventionally been prepared by the sputtering technique. , However, for the sputtering method, plasma damages may be induced to the layers underneath active channel, and controllability and reproducibility of the cation compositions may be limited to be stably secured owing to the aging of mass-producible single target. Therefore, the sputtering technique cannot be appropriate for the formation of IGZO active channel layers for given target applications demanding complete conformality and precise composition control of deposited thin films.…”

Section: Introductionmentioning

confidence: 99%

Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Moon

Bae

Kwon³

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Combination impacts of controlling the gate-stack process conditions and the indium contents of In–Ga–Zn–O (IGZO) channels prepared by atomic layer deposition (ALD) were investigated to strategically enhance the device performance including carrier mobility for ALD IGZO thin-film transistors (TFTs). The ALD cyclic ratios (triethyl indium/In–Ga precursor/diethyl zinc) were varied to 0:2:2, 2:2:2, and 4:2:2 for the formation of IGZO channels, which correspond to the In/Ga ratios of 0.3, 1.0, and 2.0. While the device using the IGZO channel with an In/Ga ratio of 0.3 did not show any marked difference with the variations in the type of oxidants during the gate-stack formation processes, the carrier concentration and relative amounts of oxygen vacancy within the IGZO channels were found to significantly exhibit an increasing trend with increasing In/Ga ratio, when the Al2O3 protection layer (PL) was prepared with the oxidants incorporating a larger amount of hydrogen-related species. Thus, the physical properties of Al2O3 PL and gate insulator (GI) were controlled by changing the type of oxidants during the ALD processes. As a result, the carrier mobility (9.9 cm2/V s) of the device using an IGZO film with an In/Ga ratio of 0.3 could be enhanced to 23.5 cm2/V s by increasing the In/Ga ratio to 2.0 with the combination of the PL formation process designed with O2-plasma. Furthermore, the carrier mobility additionally improved to 27.6 cm2/V s when the In/Ga ratio increased to 1.4 with simultaneously employing the process conditions using the O3 oxidant for the formations of PL and GI layers. The ALD IGZO TFTs fabricated with the proposed optimum conditions also exhibited excellent bias stabilities.

show abstract

“…1,2) Recently, back-end-of-line (BEOL) compatible oxide-based TFTs have also been explored for several fields which could potentially be implemented in large-scaleintegrated (LSI) chips, including high-frequency microwave devices, select transistors for three-dimentional stacking memory arrays, complementary metal-oxide-semiconductor (CMOS) image sensors, and high-voltage control circuit blocks. [3][4][5][6][7] These applications are feasible mainly because the oxide-based TFTs can be fabricated at low temperatures (<400 °C) with BEOL-compatible mature tools and processes. Moreover, the oxide materials exhibit appealing properties like wide bandgap, transparency, and good carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

“…In this regards, n-channel unipolar as well as CMOS inverters have been explored recently. [8][9][10] Theoretically CMOS is the most ideal among various logic gate technologies in terms of power dissipation and performance, however, the lack of high-performance p-channel oxide devices hinders its development. For the unipolar approaches, the combination of a depletion-mode TFT as the load and an enhancement-mode TFT as the driver have been demonstrated to exhibit superior performance.…”

Section: Introductionmentioning

confidence: 99%

Novel InGaZnO inverters utilizing film profile engineering

Lin

Chan

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)based inverters with a resistor-or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (V DD ) of 5 V.

show abstract

BEOL-Transistor Technology with InGaZnO channel for High/Low Voltage Bridging I/Os

Cited by 3 publications

References 0 publications

Sensor applications of InGaZnO thin-film transistors

Sensor applications of InGaZnO thin-film transistors

Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Novel InGaZnO inverters utilizing film profile engineering

Contact Info

Product

Resources

About