Sensor applications of InGaZnO thin-film transistors

Abstract

This article reviews and discusses sensor applications of bottom-gate type InGaZnO thin-film transistors (TFTs). First, we discuss specific features of InGaZnO TFTs that differentiate them from Si-based TFTs, such as the significant capacitive coupling between the bottom-gate and top-gate electric fields and material properties such as carrier generation mechanism. Although flat-panel displays driven by InGaZnO TFTs have been developed, these features have not necessarily been utilized. Based on these features, next, we review and discuss possible chemical-sensor concepts of InGaZnO TFTs, like gas sensors, pH sensors, and biochemical sensors. We also cover possible physical-sensor concepts like photo sensors, temperature sensors, and electrostatic potential sensors. Regarding these sensor concepts, the passivation layer in the InGaZnO TFTs or the InGaZnO layer itself works as the sensitive membrane that responds to particular substances. These sensor concepts can provide a way to incorporate InGaZnO TFTs into a wide variety of sensor applications.

Recent advances in film-based fluorescence sensing

“…敏感元件作为 传感器的核心部件, 如同人的感觉器官一样, 在传感检 测中起重要作用. 传感器按照敏感元件的种类不同, 大 致可以分为三大类: 生物类, 如基于酶、抗体和激素等 分子识别功能的传感器 [6,7] ; 化学类, 指基于化学反应 原理的传感器 [8] ; 物理类, 通常指基于光、电、磁、 力、热和声等物理效应响应的传感器 [9,10] . 这其中, 基于化学类的荧光化学传感器由于具备 荧光信号明显、响应速度快、操作简单等优势受到人 们的广泛关注 [11~15] .…”

“…(a) Synthesis route for B-1 and its condensation reactions with different non-boron motifs; (b) recognition patterns of the saturated vapors of the tested VSOMs at 293 K obtained by collecting fluorescence intensity variations of the sensors (S1 to S8). Note: the Arabic numerals in the figure stand for different chemicals: specifically, methane (1), ethane(2), propane (3), n-butane (4), n-pentane (5), n-hexane (6), n-heptane(7), n-octane(8), nnonane (9), n-decane(10), methanol (11), toluene(12), diethyl ether (13), benzene(14), acetone(15), ethanol(16), THF(17), DCM(18), TCM(19) and water(20). (c) Home-made sensing platform developed for VSOMs vapor detection[63] (color online).…”

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

“…There has been extensive research on thin-film transistors (TFTs) because they are integral components of most electronic devices. − In general, TFTs are fabricated with a Si-type semiconductor (e.g., a-Si:H and LTPS) and an inorganic gate-insulating layer. , New demands placed on TFT devices have led to the development of new types of semiconductors because Si-based TFTs have several limitations, including low mobility (a-Si:H), high process costs (LTPS), poor large-area uniformity (LTPS), and high leakage current (a-Si:H, LTPS). Among the various types of semiconductors other than silicon, amorphous oxide semiconductors, particularly amorphous In-Ga-Zn-O (a-IGZO), have been commercialized because of their advantages over Si-based semiconductors, including room-temperature fabrication and high mobility above 10 cm 2 /(V s), even in amorphous structures. , Such a-IGZO TFTs are generally fabricated with an inorganic insulating layer such as SiN x or SiO x .…”