Amorphous oxide semiconductors: From fundamental properties to practical applications

All‐Solution‐Processed InGaO/PbI2 Heterojunction for Self‐Powered Omnidirectional Near‐Ultraviolet Photodetection and Imaging

“…[14] Fortunately, the amorphous structure can avoid the problem of phase separation and is conducive to obtaining a compact, uniform, and smooth film. [15,16] It is worth pointing out that the amorphous InGaO film also shows high mobility and ideal stability, due to that the electron cloud in the outermost 5s orbit of In element is spherically symmetric in an amorphous state. [15] At the same time, the disorder of arrangement is insensitivity to the distortion of chemical bonds and stress, fascinating the next-generation flexible, stretchable, and omnidirectional devices.…”

“…[15,16] It is worth pointing out that the amorphous InGaO film also shows high mobility and ideal stability, due to that the electron cloud in the outermost 5s orbit of In element is spherically symmetric in an amorphous state. [15] At the same time, the disorder of arrangement is insensitivity to the distortion of chemical bonds and stress, fascinating the next-generation flexible, stretchable, and omnidirectional devices. [1,17,18 ] Although amorphous InGaO film has been widely studied in electrical devices, its ultraviolet photodetection behaviors are studied limited in the literature.…”

Phase Transition and Bandgap Engineering of MgSnO Thin Films for Solar-Blind Ultraviolet Photodetector Applications

“…In this perspective, Xu et al demonstrated amorphous MgSnO photodetectors with bandgaps ranging from 4.13 to 4.67 eV, which confirms the potential of using MgSnO ternary alloys to achieve deep-UV photodetectors. Compared to single-crystal material, amorphous material has multiple advantages, such as being easy to fabricate on a large scale, having no grain boundaries, and having a low fabrication cost. − However, if MgSnO could appear as a single crystalline nature instead of an amorphous nature, the device performance would be vastly improved. Moreover, the phase transition of MgSnO from rutile to amorphous and to rock-salt structure is still unclear.…”

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

“…7 In addition, thanks to the recent advances in neuromorphic computing, memristors have become the core components of artificial neural network (ANN) arrays. 8,9 In order to realize the switching of resistance, various principles are employed, such as electrochemical metallization (ECM), [10][11][12][13] phase transition, 14 polarization reversal, 15 ion transport, 16 etc. More intuitively, memristors can also be classified according to whether they form conductive filaments.…”