2022
DOI: 10.1002/adma.202109671
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Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies

Abstract: Figure 1. Schematic of coupling between the state vector ψ, control field 0 E and TLS of amplitude b , causing the state to randomly fluctuate between ± 0 E b , with a switching rate γ.

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Cited by 12 publications
(6 citation statements)
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“…One approach is the incorporation of some polymer with the organic dyes, which can separate the chromophores and increase the coherent dynamics of these Rh-B chromophores. The longer coherence times are promising features in light harvesting, optoelectronics, lasing, and quantum computing. …”
Section: Introductionmentioning
confidence: 99%
“…One approach is the incorporation of some polymer with the organic dyes, which can separate the chromophores and increase the coherent dynamics of these Rh-B chromophores. The longer coherence times are promising features in light harvesting, optoelectronics, lasing, and quantum computing. …”
Section: Introductionmentioning
confidence: 99%
“…UCF, a consequence of quantum interference, are aperiodic, reproducible fluctuations of the conductance of magnitude ≈ e 2 /h in a system, observed when the sample length is comparable to the phase coherence length (l φ ) [27][28][29][30][31]. The magnitude of UCF is strongly influenced by the underlying symmetries of the system and has been used to probe the ground state symmetries in many materials [32][33][34][35][36][37][38][39][40]. Theory predicts that the magneticfield-induced topological phase transition from a Dirac semimetal to a Weyl semimetal will manifest as a reduction in UCF magnitude by √ 2 [26] as one breaks TRS.…”
Section: Introductionmentioning
confidence: 99%
“…However, it may also obscure the signal in electronic devices and limit precision measurements. Electronic flicker noise originates from time-dependent resistance fluctuations that can be generated by various mechanisms, including charge trapping–detrapping and scattering of mobile charge carriers by defects and impurities with time-dependent scattering cross sections. ,,,, Flicker noise is observed when a voltage difference or current bias is applied across a conductor, revealing the mentioned resistance fluctuations, though it can also be detected by temporal currents at thermal equilibrium. , …”
mentioning
confidence: 99%
“…Flicker noise, sometimes known as 1/ f noise due to its inverse dependence on frequency, is a ubiquitous phenomenon in nature. The electronic version of flicker noise can be found in most electronic conductors or devices, ,,,, down to single molecule conductors. This noise plays a central role in both fundamental research and technology since it contains useful information on device structure, material properties, and electron transport mechanisms. However, it may also obscure the signal in electronic devices and limit precision measurements.…”
mentioning
confidence: 99%