Behavior of the first layer growth in GaAs molecular beam epitaxy

The structure and atomic-scale morphology of GaAs surfaces and the use of reflection high-energy electron diffraction to control their evolution during molecular beam epitaxy are reviewed. Results on the terrace-step structure of the singular (001) surface, on step arrays on vicinal (001) surfaces and on facet arrays on high-index surfaces are presented. Implications for interface formation and modifications by incorporation of impurities are pointed out. New approaches toward a direct synthesis of one-dimensional structures are considered, including the attachment of impurity atoms at edges of miso~rientation steps and GaAs/AiAs multilayer growth on corrugated high-index surfaces.

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Behavior of the first layer growth in GaAs molecular beam epitaxy

Abstract: Growth of high quality GaAs layers directly on Si substrate by molecularbeam epitaxy J. Vac. Sci. Technol. B 5, 815 (1987); 10.1116/1.583759Molecularbeamepitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation

Cited by 2 publications

References 8 publications

An STM study of molecular-beam epitaxy growth of GaAs

An STM study of molecular-beam epitaxy growth of GaAs

Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy

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