Behavior of AlSi Schottky barrier diodes under heat treatment

Chino, Ken-ichi

doi:10.1016/0038-1101(73)90132-9

Cited by 59 publications

(19 citation statements)

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“…References (10) and (23) have also considered the effects associated with acceptor doping profiles with Gaussian, exponential, or complementary error function form. For a given quantity of ionized acceptor charge, the relative magnitude of the barrier enhancement A4~B decreases in the order planar > Gaussian > erfc > exponential.…”

Section: Discussionmentioning

confidence: 99%

“…Numerous schemes for obtaining a low leakage gate structure have been investigated, including MOS (1-2), MIS (3)(4)(5), JFET (6)(7), and heterojunction (8) contacts. Increasing the Schottky barrier height in this manner has been demonstrated using reactive metallization (10), ion implantation (11), and molecular beam epitaxy (12)(13)(14). Increasing the Schottky barrier height in this manner has been demonstrated using reactive metallization (10), ion implantation (11), and molecular beam epitaxy (12)(13)(14).…”

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confidence: 99%

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Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz

Gualtieri

Bonner

1986

J. Electrochem. Soc.

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An in vacuo, shallow Zn diffusion technique has been examined for increasing the effective Schottky barrier height of Ag and Au on (100) n-InP. For a single diffusion cycle, a barrier enhancement of -0.1 eV was achieved by forming a shallow (-400]t) p § layer with an acceptor-to-bulk-donor ratio NA/ND ~ 10. A multiple diffusion sequence yielded barrier enhancements of -0.2 eV for a p* layer width of -800]~ and NA/ND ~ 6-8. Numerical evaluation of Poisson's equation, including both electron and hole free-carrier densities, provides estimates of where the depletion approximation fails as a function of doping and width of the surface p* layer.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-26 to IP

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz

Gualtieri

Bonner

1986

J. Electrochem. Soc.

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“…A large number of applications have been reported for this technique, which is generally called electron beam induced current (EBIC) (2)(3)(4). Therefore, it is particularly important to establish a measurement technique that allows precise location of p-n junctions on a chip.…”

Section: A Novel Methods For Measurement Of the Channel Length Of Shormentioning

confidence: 99%

A Novel Method for Measurement of the Channel Length of Short Channel MOSFET's

Okumura

Miyoshi

1982

J. Electrochem. Soc.

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for a direct and accurate measurement of the contact resistance; (iii) careful evaluation of contacts to p+Si; in most published studies an emphasis has been made on the case of n+Si; and (iv) the contact area in the present work is relatively small (5 • 5 ~m2).More studies on this and other metallization systems are required in order to further advance the knowledge on ohmic contacts that are suitable for use in VLSI technology. Also, since the TLM model has been widely used, an extensive study aimed at comparing its results with those obtained by the test structure used in the present study would be helpful.Publication co~ts of this article were assisted by General Electric Company.

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“…Thus, the effect of hydrogen adsorption is negligible. Electrical measurement results of Al-contacted devices showed that the work function of Al was also not affected by the hydrogen annealing around 400 °C [ 14 , 23 ], since the interaction between Al and hydrogen was energetically unstable [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

et al. 2021

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We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations.

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Behavior of AlSi Schottky barrier diodes under heat treatment

Cited by 59 publications

References 3 publications

Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

A Novel Method for Measurement of the Channel Length of Short Channel MOSFET's

The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

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