The assembly of semiconductor nanowires and carbon nanotubes into nanoscale devices and circuits could enable diverse applications in nanoelectronics and photonics. Individual semiconducting nanowires have already been configured as field-effect transistors, photodetectors and bio/chemical sensors. More sophisticated light-emitting diodes (LEDs) and complementary and diode logic devices have been realized using both n- and p-type semiconducting nanowires or nanotubes. The n- and p-type materials have been incorporated in these latter devices either by crossing p- and n-type nanowires or by lithographically defining distinct p- and n-type regions in nanotubes, although both strategies limit device complexity. In the planar semiconductor industry, intricate n- and p-type and more generally compositionally modulated (that is, superlattice) structures are used to enable versatile electronic and photonic functions. Here we demonstrate the synthesis of semiconductor nanowire superlattices from group III-V and group IV materials. (The superlattices are created within the nanowires by repeated modulation of the vapour-phase semiconductor reactants during growth of the wires.) Compositionally modulated superlattices consisting of 2 to 21 layers of GaAs and GaP have been prepared. Furthermore, n-Si/p-Si and n-InP/p-InP modulation doped nanowires have been synthesized. Single-nanowire photoluminescence, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.

The fabrication of next-generation semiconductor devices has created a need for low-temperature (≤400 °C) deposition of highly-conformal (>95%) SiO2, SiNx, and SiC films on high-aspect-ratio nanostructures. To enable the growth of these Si-based dielectric films, semiconductor manufacturers are transitioning from chemical vapor deposition to atomic layer deposition (ALD). Currently, SiO2 films deposited using ALD are already being integrated into semiconductor device manufacturing. However, substantial processing challenges remain for the complete integration of SiNx films deposited by ALD, and there are no known processes for ALD of SiC at temperatures that are compatible with semiconductor device manufacturing. In this focused review, the authors look at the status of thermal and plasma-assisted ALD of these three Si-based dielectric films. For SiO2 ALD, since low-temperature processes that deposit high-quality films are known, the authors focus primarily on the identification of surface reaction mechanisms using chlorosilane and aminosilane precursors, as this provides a foundation for the ALD of SiNx and SiC, two material systems where substantial processing challenges still exist. Using an understanding of the surface reaction mechanisms, the authors describe the underlying reasons for the processing challenges during ALD of SiNx and SiC and suggest methodologies for process improvement. While both thermal and plasma-assisted SiNx ALD processes have been reported in the literature, the thermal NH3-based ALD processes require processing temperatures >500 °C and large NH3 doses. On the other hand, plasma-assisted SiNx ALD processes suffer from nonuniform film properties or low conformality when deposited on high-aspect-ratio nanostructures. In the SiNx section, the authors provide a broad overview of the currently known thermal and plasma-assisted SiNx ALD processes using chlorosilane, trisilylamine, and aminosilane precursors, describe the process shortcomings, and review the literature on precursor reaction pathways. The authors close this section with suggestions for improving the film properties and conformality. In the case of SiC, the authors first outline the limitations of previously reported SiC ALD processes and highlight that unlike SiO2 and SiNx plasma-assisted ALD, no straightforward pathway for low-temperature plasma-assisted growth is currently apparent. The authors speculate that low-temperature ALD of SiC may require the design of completely new precursors. Finally, they summarize the progress made in the ALD of C-containing SiNx and SiO2 films, which may provide many of the benefits of SiC ALD in semiconductor manufacturing. In closing, through this review, the authors hope to provide the readers with a comprehensive knowledge of the surface reactions mechanisms during ALD of Si-based dielectrics, which would provide a foundation for future precursor and process development.

Electrodeposition is a widely used materials-deposition technology with a number of unique features, in particular, the efficient use of starting materials, conformal, and directed coating. The properties of the solvent medium for electrodeposition are critical to the technique's applicability. Supercritical fluids are unique solvents which give a wide range of advantages for chemistry in general, and materials processing in particular. However, a widely applicable approach to electrodeposition from supercritical fluids has not yet been developed. We present here a method that allows electrodeposition of a range of metals from supercritical carbon dioxide, using acetonitrile as a co-solvent and supercritical difluoromethane. This method is based on a careful selection of reagent and supporting electrolyte. There are no obvious barriers preventing this method being applied to deposit a range of materials from many different supercritical fluids. We present the deposition of 3-nm diameter nanowires in mesoporous silica templates using this methodology.electrochemistry ͉ nanomaterials

The spatial structure and temporal characteristics of sea breeze and the associated coastal ocean response in the northwest Gulf of Mexico are investigated using moored instruments, hydrographic stations, and wind measurements. Near the study area of 30°N, motions in the diurnal–inertial band (DIB) may be significantly enhanced by a near-resonant condition between local inertial and diurnal forcing frequencies. Wavelet analysis is used to quantify the results. Results indicate that diurnal sea-breeze variability peaks in summer and extends at least 300 km offshore with continuous seaward phase propagation. The maximum DIB oceanic response occurs in June when there is a shallow mixed layer, strong stratification, and an approximately 10-day period of continuous sea-breeze forcing. DIB current variance decreases in July and August as the consequence of the deepening of the mixed layer and a more variable phase relationship between the wind and current. River discharge varies interannually and can significantly alter the oceanic response during summer. The “great flood” of the Mississippi River in 1993 deepened the summer mixed layer and reduced the sea-breeze response during that year. Vertically, DIB currents are surface intensified, with a first baroclinic modal structure. The significance of these DIB motions on the shelf is that they can provide considerable vertical mixing in summer, as seen by the suppression of the bulk Richardson number (by a factor of 30) during strong DIB events. This provides a potential mechanism to ventilate seasonally occurring near-bottom hypoxic waters of the coastal ocean.

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