Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy

Abstract

Epitaxial lateral growth has been conducted without using oxide masks by a new technique called as beam induced lateral epitaxy (BILE). In this technique, molecular beams are sent in a glancing angle with respect to a substrate in MBE and a large lateral growth was accomplished on a side of pre-fabricated truncated ridges on the substrate. By using BILE we have successfully grown GaAs in lateral direction on GaAs(001) substrate. It was found that the growth behavior of BILE depends strongly on incident angle of the Ga beam. With the incident angle of 12°, a lateral growth of nearly 6µm wide was achieved. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

Formation mechanism of rotational twins in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate

“…Recently, we proposed a new method for lateral growth called beam-induced lateral growth (BILE), which enables us to obtain lateral growth in molecular-beam epitaxy (MBE) [6][7][8][9]. In BILE, lateral growth is accomplished on prefabricated truncated ridges employing a low angle incidence of molecular beams.…”

Growth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy

“…Because selective growth is easily achieved at a relatively low temperature without a SiO 2 mask, it is easier to use BILE to obtain a smooth surface by protecting the sample from thermal roughing. However, use of BILE on (0 0 1) GaAs usually showed a relatively rough upper surface [13]. To improve the technique, we have studied the growth mechanism of BILE, and so far, we have found that the formation of facets on the lateral growth front controls the shape of BILE [14].…”

“…As a result, it is difficult to obtain a smooth surface of the layer. To overcome these difficulties, a new technique called beam-induced lateral epitaxy (BILE) was proposed, in which lateral overgrowth is accomplished by supplying molecular beam at a low angle to a substrate with a ridge structure [13]. Because selective growth is easily achieved at a relatively low temperature without a SiO 2 mask, it is easier to use BILE to obtain a smooth surface by protecting the sample from thermal roughing.…”

Defect formation mechanism in beam-induced lateral epitaxy on (111)B GaAs substrate

“…Recently, we proposed an alternate method called beam-induced lateral growth (BILE) to obtain lateral growth in molecular beam epitaxy (MBE) [4]. In BILE, lateral growth can be achieved even at a low growth temperature because selective growth with a mask is not necessary.…”