Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

Niebuhr, R.; Bachem, K. H.; Dombrowski, K. F.; Maier, M.; Pletschen, W.; Kaufmann, U.

doi:10.1007/bf02676806

Cited by 55 publications

(27 citation statements)

References 17 publications

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“…To date, several groups have tried this approach with carbon sources including CCl 4 , methane cracked in plasma, and electron beam evaporated graphite. However, in each case the carbon source introduces alternative problems with the carbon doping mitigating the advantage of the purity inherent to the MBE method.…”

Section: Introductionmentioning

confidence: 99%

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Green

Mishra

Speck

2004

Journal of Applied Physics

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Carbon tetrabromide (CBr 4 ) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation ͓C͔ was found to be linearly related to the incident CBr 4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction were used to characterize the structural quality of the film's postgrowth. No deterioration of structural quality was observed for ͓C͔ from mid 10 17 to ϳ10 19 cm Ϫ3 . The growth rate was also unaffected by carbon doping with CBr 4 . The electrical and optical behavior of carbon doping was studied by co-doping carbon with silicon. Carbon was found to compensate the silicon although an exact compensation factor was difficult to extract from the data. Photoluminescence was performed to examine the optical performance of the films. Carbon doping was seen to monotonically decrease the band edge emission. Properties of carbon-doped GaN are interpreted to be consistent with recent theoretical work describing incorporation of carbon as function of Fermi level conditions during growth.

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Section: Introductionmentioning

confidence: 99%

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Green

Mishra

Speck

2004

Journal of Applied Physics

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“…[4][5][6][7] It was demonstrated that the photolumi- ( Photoluminescence (PL) and reflection spectra of undoped and Mg-doped GaN single layers grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) were investigated in a wide range of temperatures, excitation intensities, and doping levels. The undoped layers show n-type conductivity (µ = 400 cm 2 /Vs, n = 3 × 10 17 cm -3 ).…”

Section: Introductionmentioning

confidence: 99%

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Yablonskii

Gurskii

Луценко

et al. 1998

Journal of Elec Materi

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“…The YL was suggested to involve a radiative transition between a shallow donor, with the ionization energy of ϳ25 meV, and a deep acceptor, situated 860 meV above the top of the valence band. 8 Polyakov et al 9 and Niebuhr et al 10 have also attributed the observed YL in GaN grown by MOVPE to carbon impurities. The halide vapor phase epitaxy ͑HVPE͒ technique does not use carbon containing source materials but only uses NH 3 , HCl, and ultrapure Ga to synthesize GaN.…”

mentioning

confidence: 96%

“…Carbon impurities are also believed to be related to yellow luminescence ͑YL͒ in GaN. [7][8][9][10] Some of the initial photoluminescence ͑PL͒ studies on C-doped GaN were carried out by Pankove and Hutchby. 7 They reported that C-implanted GaN exhibited a strong yellow luminescence band centered around 2.17 eV at 78 K. This band was attributed to defects arising from implantation damage, since the YL band could also be seen in samples implanted with other elements.…”

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confidence: 99%

Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

Zhang¹,

Kuech²

1998

Applied Physics Letters

127

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Carbon was in situ doped into GaN during halide vapor phase epitaxy and photoluminescence properties of the C-doped GaN film were investigated. It has been found that incorporation of carbon into GaN produces a significant yellow luminescence around 2.2 eV. The peak position of the yellow band blueshifts linearly and the intensity of that band monotonically decreases with measurement temperature, with systematic changes in the linewidth. These results suggest that multiple donor-acceptor recombination channels are involved in the yellow luminescence. © 1998 American Institute of Physics. ͓S0003-6951͑98͒02013-0͔Recent advances in GaN-based materials, 1 such as lightemitting diodes ͑LEDs͒, 2 have stimulated worldwide interest in developing novel GaN-based optoelectronic and electronic devices. Although a GaN continuous-wave ͑cw͒ injection laser diode has successfully been operated at room temperature with a lifetime greater than 1000 h, 3 some persistent problems in GaN material have to be resolved in order to realize higher performance devices. One such problem is the behavior and impact of carbon impurities in GaN. Carbon is one of the most common contaminants in the metalorganic vapor phase epitaxy ͑MOVPE͒ of GaN. 4 Carbon impurities in GaN are thought to occupy anion sites and act as acceptors. 5,6 Carbon may also combine with other defects, such as Ga vacancies, 7 due to the electronegativity and size differences between the carbon impurity and host atom. Carbon impurities are also believed to be related to yellow luminescence ͑YL͒ in GaN.7-10 Some of the initial photoluminescence ͑PL͒ studies on C-doped GaN were carried out by Pankove and Hutchby.7 They reported that C-implanted GaN exhibited a strong yellow luminescence band centered around 2.17 eV at 78 K. This band was attributed to defects arising from implantation damage, since the YL band could also be seen in samples implanted with other elements.7 Ogino and Aoki 8 found that the YL in both GaN microcrystal powder and needlelike crystals was greatly enhanced by intentional introduction of carbon into those materials. They concluded that the carbon impurities were crucial for YL. The YL was suggested to involve a radiative transition between a shallow donor, with the ionization energy of ϳ25 meV, and a deep acceptor, situated 860 meV above the top of the valence band. 8 Polyakov et al. 9 and Niebuhr et al. 10 have also attributed the observed YL in GaN grown by MOVPE to carbon impurities. The halide vapor phase epitaxy ͑HVPE͒ technique does not use carbon containing source materials but only uses NH 3 , HCl, and ultrapure Ga to synthesize GaN. 11,12 Carbon would only appear in these materials as an unintentional dopant. The YL band in typical HVPE-grown GaN is either absent or very weak 11,12 in agreement with the lack of carbon in the growth system. HVPE-grown GaN is therefore a suitable technique to study the correlation between YL and C atoms in GaN by intentional C doping during GaN growth. In this letter, we will report on the PL properties ...

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Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers

Cited by 55 publications

References 17 publications

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

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