Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m-Plane GaN

McLaurin, M.; Hirai, Asako; Young, Erin C.; Wu, Feng; Speck, James S.

doi:10.1143/jjap.47.5429

Cited by 106 publications

(127 citation statements)

References 19 publications

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“…Basal plane stacking faults ͑BPSFs͒ are among the most abundant defects in nonpolar nitride films, in particular the intrinsic I 1 -type BPSFs. 15,17,18,33 However, the two accessible on-axis reflections for a-plane InN, i.e., ͑1120͒ and ͑2240͒, are unaffected by the BPSF. 18,27 Therefore, the respective Williamson-Hall plots would give LCLs that are greatly overestimated.…”

Section: A Assessment Of Film Structure By Xrdmentioning

confidence: 99%

“…[13][14][15][16] Similar azimuth dependence of the on-axis ͑1100͒ RC FWHM has also been reported for m-plane GaN films. 17 The anisotropic behavior of the RC FWHM in nonpolar GaN films was attributed to the combined or sole effect of anisotropic distribution of dislocations, 14,15 tilt, 15 wafer bending, 16 and stacking faults. 17,18 Surface roughness was also shown to affect the RC broadening 18 observed anisotropy.…”

Section: Introductionmentioning

confidence: 99%

“…17 The anisotropic behavior of the RC FWHM in nonpolar GaN films was attributed to the combined or sole effect of anisotropic distribution of dislocations, 14,15 tilt, 15 wafer bending, 16 and stacking faults. 17,18 Surface roughness was also shown to affect the RC broadening 18 observed anisotropy. 19 Reports on the structural anisotropy of semipolar GaN just begun to emerge and the on-axis RC of semipolar ͑1122͒ GaN films have been recently found to also exhibit anisotropic behavior.…”

Section: Introductionmentioning

confidence: 99%

“…20 The structural anisotropy of nonpolar III-nitride films affects their optical performance and device-relevant characteristics ͑carrier mobility, degradation, etc.͒, which requires detailed study of these issues. While the structural anisotropy of nonpolar GaN films have been extensively studied 1, [14][15][16][17][21][22][23] the information on the structural characteristics of nonpolar InN is very scarce 24,25 and detailed reports exists only for films grown on GaN substrates. 26,27 However, the nonpolar GaN substrates are not only extremely expensive but also have a limited supply.…”

Section: Introductionmentioning

confidence: 99%

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Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a-and m-plane surface orientations on r-plane sapphire and ͑100͒ ␥-LiAlO 2 , respectively, and semipolar ͑1011͒ InN grown on r-plane sapphire. The on-axis rocking curve ͑RC͒ widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN ͓0001͔ for the a-plane films, and maxima at InN ͓0001͔ for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN͑111͒A and InN͑111͒B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a-and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

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Section: A Assessment Of Film Structure By Xrdmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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“…Strain state analyses revealed that the use of thin QWs (d QW ¼ (1.5 6 0.2) nm) results in a small degree of relaxation well below 10%, which allows us to treat the structures as fully strained in the further discussion. In addition, a modified Williamson-Hall analysis of the x-ray rocking curve widths 17 was used to determine the stacking fault density in our samples. While the BSF density of the structures on bulk GaN was below the detection limit of about 1 Â 10 4 cm À1 , 17 we found a stacking fault density of about 1 Â 10 6 cm À1 in the samples on m-plane SiC in good agreement with TEM measurements.…”

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confidence: 99%

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. V C 2011 American Institute of Physics. [doi:10.1063/1.3607301] In the past few years, GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE), 1 GaN layers grown on non-polar surfaces are free from polarization fields in growth direction. 2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al. on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire). [5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy. 9-11 More recently, a BSF related emission from aplane GaN/AlGaN quantum well (QW) structures was reported, suggesting the formation of quantum-wire-like states in the regions where BSFs intersect the QWs. 12,13 In this paper, we investigate the optical properties of m-plane GaInN/GaN QW structures grown on silicon carbide (SiC). In particular, we show that stacking faults intersecting the QWs dominate the optical properties of these structures.Our samples were grown on m-plane 6H-SiC, m-plane bulk GaN substrates, and a-plane GaN templates (grown by hydride vapor phase epitaxy) in a low pressure metalorganic vapor phase epitaxy system with a horizontal reactor (Aixtron AIX 200RF). The precursors used were trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium,...

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Structural properties of bulk GaN substrates: Impact of structural anisotropy on non‐polar and semi‐polar crystals

Serafińczuk

Kucharski

Zając

et al. 2015

Crystal Research and Technology

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In this paper we show the structural parameters and structural anisotropy of the bulk GaN substrates of various crystallographic orientations (00.1), (10.0), (11.0) and (20.1) obtained by ammonothermal method. The structural parameters were investigated using high resolution X‐Ray Diffraction. Perfect crystalline structure manifests in very narrow peaks in X‐ray rocking curves. The full width at half maximum (FWHM) values of 16 and 18 arcsec for the symmetrical and asymmetrical peaks, respectively, have been observed. In addition, we observed structural anisotropy in the non‐polar and semi‐polar crystals, depending on the orientation of the sample relative to the X‐ray beam. It is conducted that this anisotropy is a intrinsic property of non‐polar and semi‐polar GaN substrates.

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Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m-Plane GaN

Cited by 106 publications

References 19 publications

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Structural properties of bulk GaN substrates: Impact of structural anisotropy on non‐polar and semi‐polar crystals

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