2009
DOI: 10.1107/s002188980904196x
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Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography

Abstract: Basal plane bending is a structural defect in SiC single crystals caused mainly by the thermal mismatch between seed and holder, which deteriorates the quality of the wafers and blocks their applications. In this paper, basal plane bending was detected by high‐resolution X‐ray diffractometry (HRXRD) and transmission synchrotron white‐beam X‐ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of the Laue spots are different from that of the cross sec… Show more

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Cited by 5 publications
(2 citation statements)
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“…[ 18 ] Accordingly, the relative peak intensity ratio (I 1/2 ) can also reflect the degree of π – π interaction. [ 23 ] The I 1/2 of 8%PTCDA/PTA is 1.96, which is significantly higher than that of PTA (1.57), indicating that PTCDA promotes the degree of π – π stacking, [ 24 ] which is consistent with the tendency of FT‐IR results.…”
Section: Resultssupporting
confidence: 64%
“…[ 18 ] Accordingly, the relative peak intensity ratio (I 1/2 ) can also reflect the degree of π – π interaction. [ 23 ] The I 1/2 of 8%PTCDA/PTA is 1.96, which is significantly higher than that of PTA (1.57), indicating that PTCDA promotes the degree of π – π stacking, [ 24 ] which is consistent with the tendency of FT‐IR results.…”
Section: Resultssupporting
confidence: 64%
“…The diffraction peak position of omega rocking curves shifts as the beam position changed along the wafer. This shift corresponds to basal plane bending which originate from plastic deformation during SiC single crystal growth [6]. Through control of growth process, reducing of surface bending is achieved.…”
Section: Resultsmentioning
confidence: 99%