Synthesis and characterization of high quality {100} diamond single crystal

Xie, Xuejian; Wang, Xiwei; Yan, Peng; Cui, Yingxin; Chen, Xiufang; Xu, Xiangang; Yu, Peng; Wang, Ruiqi

doi:10.1007/s10854-017-6735-7

Cited by 11 publications

(7 citation statements)

References 29 publications

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“…High quality HPHT diamond crystal, which is 7 × 7 mm in size, was grown in a cubic press system by Jinan Diamond Technology Co., Ltd. The origin diamond was type I b with a nitrogen concentration of about 10 19 /cm 3 , as measured by Secondary Ion Mass Spectroscopy (SIMS) from EAG laboratories (Shanghai China) [16]. After the HPHT growth, the diamond crystal was boiled in the mixed solution of perchloric acid, sulfuric acid, and hydrochloric acid for 3 h to remove the dirt covered on the crystal surface (All the above acids are from Aladdin, Shanghai, China).…”

Section: Methodsmentioning

confidence: 99%

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

et al. 2019

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The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relationships among the chamber pressure, substrate surface temperature, and system microwave power were investigated. The surface morphology evolution with a series of different concentrations of the gas mixture was observed. It was found that a single lateral crystal growth occurred on the substrate edge and a systemic step flow rotation from the [100] to the [110] orientation was exhibited on the surface. The Raman spectroscopy and High Resolution X-Ray Diffractometry (HRXRD) prove that the homoepitaxy part from the original HPHT substrate shows a higher quality than the lateral growth region. A crystal lattice visual structural analysis was applied to describe the step flow rotation that originated from the temperature driven concentration difference of the C2H2 ion charged particles on the SCD center and edge.

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Section: Methodsmentioning

confidence: 99%

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

et al. 2019

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“…We applied the basic principle of X-ray diffraction to detect basal plane bending [ 17 , 18 ]. When the basal plane is flat, the normal of the diffraction plane remains the same regardless of the beam positions.…”

Section: Methodsmentioning

confidence: 99%

Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

et al. 2020

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We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.

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“…We applied the basic principle of x-ray diffraction to detect lattice-plane bending. [12][13] When the lattice plane is not bent, the normal orientation of the diffraction plane remains the same regardless of the beam position. As a result, the angle of incidence is independent of the beam position (ω1 = ω2 = ω3; where ω is the angle between the incident beam and the sample surface), as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Basal Plane Bending of Homoepitaxial MPCVD Single-crystal Diamond

Han¹,

Duan²,

Peng³

et al. 2020

Preprint

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We report herein high-resolution x-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). The results reveal that growth parameters such as temperature, growth time and basal plane bending of the substrate affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate itself. The basal plane bending of SCD becomes more severe with increasing basal plane bending of the substrate and this type of basal plane bending cannot be recovered. The SCD growth experiments show that the basal plane bending increases at high temperature and with increasing growth time. Finally, to understand the mechanism behind basal plane bending, we investigate the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapour deposition (CVD). This allows us to propose a bending model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the CVD diamond base-plane bending.

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Synthesis and characterization of high quality {100} diamond single crystal

Cited by 11 publications

References 29 publications

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

Basal Plane Bending of Homoepitaxial MPCVD Single-crystal Diamond

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