Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

Abstract

We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.

Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

“…Recently, a German Scientist has developed a freestanding SCD substrate with a diameter of 92 mm by heteroepitaxy on Ir/YSZ/Si(001) [10]. However, the dislocations [11][12][13][14] and stress [15,16] in diamond films are still a major issue in developing large and high-quality diamonds. In order to improve these phenomena, several techniques have been used [17][18][19][20][21][22][23][24].…”