Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around −1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond.
In this work, the reduced iron powders were phosphated to form ferrous phosphate insulating layer on their surface. Then the iron based soft magnetic composites (SMCs) were prepared successfully by powder metallurgy and annealing process. The presence of insulating layer decreased the eddy current loss of iron powders. Furthermore, the effect of the annealing process on magnetic performance was investigated. The appropriate annealing temperature and holding time were carried out in this work. The samples were annealed in a N 2 atmosphere from 550 to 650 o C and kept for 10 to 30 min. According to the results, the phosphated iron based SMCs that were annealed in a N 2 atmosphere at 600 o C for holding 15 min of holding time had the satisfying magnetic properties. It has a high resistivity (ρ) of 0.0173 Ω•cm, a high saturated magnetic flux density (B s ) of 1.408 T, a high maximum permeability (μ m ) of 263, a low coercivity (H c ) of 197 A/m and a low core loss (P s ) of 119.70 W/kg at 1000 Hz (B m =1 T).
Fabrication of hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with AlOx dielectric layer has been successfully carried out. The AlOx layer was formed by auto-oxidizing 6 nm Al film in the air at room temperature, and a FET without AlOx dielectric layer has also been fabricated for comparison. For both FETs, 100 nm Al layers were deposited as the gate electrodes, respectively. The leakage current density in FET with AlOx dielectric layer was four magnitude orders lower than that without AlOx dielectric layer at VGS = −5 V, indicating that AlOx dielectric layer could effectively reduce leakage current and prevent reverse ID in ID − VDS caused by defects on diamond surface. Distinct pinch-off characteristic with p-type channel was observed in ID − VDS measurement. The threshold voltage was −0.4 V at VDS = −15 V.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.