Wafer-Scale Graphene on 4-Inch SiC

Abstract

Wafer-scale graphene on SiC with uniform structural features was grown on semi-insulating 4 inch on-axis 4H-SiC (0001) face. Growth was carried out in a conventional physical vapor transport (PVT) growth system. Atmospheric pressure graphitization and a “face-down” orientation were account for the high uniformity of graphene. Atomic force microscopy, electrostatic force microscopy and Raman spectroscopy were used to confirm the uniformity of surface morphology and layer number. Electrical properties were also characterized by Hall measurements on 15×15mm2 samples sawed from the wafer. An average Hall mobility of about 2000cm2/Vs was obtained.

Research progress of large size SiC single crystal materials and devices

“…Semi-insulating SiC could be used for other devices, such as UV optoelectronic devices 31 , GaN-based long wavelength light-emitting diodes 32 . Graphene was grown on semi-insulating 4H-SiC (0001) by thermal decomposition [33][34][35][36] . Graphene could effectively reduce the biaxial stress of GaN films, and the strain relaxation could improve the incorporation of indium atoms in InGaN/GaN multiquantum wells (MQWS), resulting in a significant red-shift in the emission wavelength of InGaN/GaN MQWS 32 .…”