Barrier-width dependence of group-III nitrides quantum-well transition energies

Leroux, M.; Grandjean, N.; Massies, J.; Gil, Bernard; Lefèbvre, Pierre; Bigenwald, Pierre

doi:10.1103/physrevb.60.1496

Cited by 198 publications

(142 citation statements)

References 19 publications

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“…The impact of the internal field, especially the piezoelectric field caused by strain, on quantum well recombination behaviour has been confirmed experimentally and reported in various III-nitride-based heterostructures [27][28][29][30][31][32]. Redshifts of emission energy and lower emission intensity were found in strained quantum wells based on III-nitrides, confirming the strong influence of the strain-induced piezoelectric field.…”

Section: Internal Electric Fieldsupporting

confidence: 59%

Solid-State Lighting Based on Light Emitting Diode Technology

Zhu

Humphreys

2016

Optics in Our Time

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Section: Internal Electric Fieldsupporting

confidence: 59%

Solid-State Lighting Based on Light Emitting Diode Technology

Zhu

Humphreys

2016

Optics in Our Time

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“…Both observations (blue shift in PL peak energy and quenching in PL intensity) can be considered as a strong experimental evidence of the enhancement of escaping photogenerated carriers from the wells and contributing to the photocurrent due to enhanced tunneling probability of carriers, as the field in barrier increases, according to our model discussed in the next section. Similar observation has also been reported in literature [22][23][24].…”

Section: Resultssupporting

confidence: 92%

“…The average electric field was calculated by taking into account spontaneous and piezoelectric polarization [22,25,26], built-in electric field due to the Schottky contact and applied field between the contacts. If a MQW structure is incorporated in the intrinsic region of Schottky diode, it leads to the following expression [27] …”

Section: Models and Discussionmentioning

confidence: 99%

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Teke

Doğan

Yun

et al. 2003

Solid-State Electronics

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We report on characterization and operation principle of a set of GaN/AlGaN multiple-quantum-well (MQW) photovoltaic detectors. The structures were grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates and fabricated in the back-illuminated vertical Schottky geometry. Introduction of MQWs into the active region of devices is expected to enhance the quantum efficiency due to the high absorption coefficient. A nearly flat spectral responsivity between 325 and 350 nm with 0.054 A/W peak responsivity was achieved from the single-side polished backside (rough) illuminated GaN/AlGaN MQW devices. The cutoff wavelength of the MQW photodetector can be tuned by adjusting the well width, well composition and barrier height. A model has been developed to gain insight into the operation principles of MQWs photodiodes. The peak responsivity increased with decreasing barrier thickness due to enhanced tunneling of photogenerated carriers.

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“…One explanation for this difference could be in a difference of internal electric fields, which Paskov et al 22 did not consider when discussing the hole escape from the Coulomb binding. Such fields, which could arise from different doping concentrations 25 or different distances between successive BSFs, 26 certainly exist in and around such BSFs, whatever their type-I or type-II alignment, as commented by Sun et al 27 Now, a binding energy of 18 meV seems quite small compared to the bulk value ͑26 meV͒ for a type-II exciton in such shallow and narrow quantum wells, especially if one considers the presence of electric fields that, for type-II structures, tend to minimize the electron-hole separation ͑see Fig. 10 of Ref.…”

Section: Localization Effectsmentioning

confidence: 99%

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Corfdir

Lefèbvre

Levrat

et al. 2009

Journal of Applied Physics

104

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We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth ͑ELO͒ GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonly encountered extended defect of a-plane GaN: I 1 basal stacking fault. Cathodoluminescence measurements show that these stacking faults are essentially located in the windows and the N-face wings of the ELO-GaN and that they can appear isolated as well as organized into bundles. Time-integrated and time-resolved photoluminescence, supported by a qualitative model, evidence not only the efficient trapping of free excitons ͑FXs͒ by basal plane stacking faults but also some localization inside I 1 stacking faults themselves. Measurements at room temperature show that FXs recombine efficiently with rather long luminescence decay times ͑360 ps͒, comparable to those encountered in high-quality GaN epilayers. We discuss the possible role of I 1 stacking faults in the overall recombination mechanism of excitons.

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Barrier-width dependence of group-III nitrides quantum-well transition energies

Cited by 198 publications

References 19 publications

Solid-State Lighting Based on Light Emitting Diode Technology

Solid-State Lighting Based on Light Emitting Diode Technology

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

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