Bandgap measurement of thin dielectric films using monochromated STEM-EELS

Park, Jucheol; Heo, Sung; Chung, Jinwook; Kim, Heekoo; Lee, Hyung-Ik; Kim, Kihong; Park, Gyeong‐Su

doi:10.1016/j.ultramic.2009.04.005

Cited by 84 publications

(63 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the high-loss region of the EELS spectrum also the chemical composition can be determined and this is shown in figure 4. Park et al showed a relation between the plasmon loss energy and the composition of a-SiN x :H [8] and we find that this is also valid for the interface. The relation between plasmon loss energy and composition combined with the increase in plasmon loss energy occuring at the Si side (~1nm) indicates the presence of N inside Si, besides H. The presence of N was also found inside Si surface by Ikarashi et al [9].…”

Section: Resultssupporting

confidence: 79%

The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Lamers

Hintzsche

Butler

et al. 2014

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 79%

The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Lamers

Hintzsche

Butler

et al. 2014

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

“…Al 2 O 3 /high-j/SiO 2 /p-type Si structures.good agreement with other results 19,20. In 3 nm SiO 2 /Si stack, it is observed that the spectra of SiO 2 overlaps that of the Si substrate since the penetration depth in SiO 2 layer is about 3-4 nm.…”

supporting

confidence: 91%

Energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures

Rifai

Maikap

Nakamura

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…and Wong, et al . 31, 32 , the energy bandgap of SiN y increases from 1.1 eV to 5.5 eV as the N/Si (y) value rises in the SiN y thin film. When the value of y is ~1, the valance band and the conduction band sharply decrease.…”

Section: Resultsmentioning

confidence: 96%

Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

Heo

Lee

Kim

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiO x N y ) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/ SiO x N y (10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiO x N y were carefully controlled and the detector performances such as dark current and thermal stability were investigated. When the values of x and y are 0.16 and 0.66, the detector illustrates low dark current as well as excellent thermal stability. In the OPD, silicon oxynitride layer works as electron barrier under reverse bias, leading to the decrease of dark current and increase of detectivity. Since the band gap of silicon oxynitride unlike conventional buffer layers can also be controlled by adjusting x and y values, it can be adapted into various photodiode applications.Organic photodetectors (OPDs) have been widely used in practical applications such as photo-sensors, chemical sensors 1-6 , X-ray detectors 7 , and image sensors [8][9][10][11] . Among the applications, image sensors, which have been considered of replacing conventional silicon-based image sensors 4, 10 , have attracted research interest from industries and there has been considerable effort to improve the device performances of them such as the spectral response, external quantum efficiency (EQE), dark current (DC), and sensitivity. Among these, the External quantum efficiency (EQE), DC, and thermal stability are the key factors to evaluate the performance of OPDs. EQE is coupled to the efficiency and signal-to-noise ratio (SNR) of the devices. Low DC stabilizes the signal of the devices, leading to high SNR. Because organic materials in OPDs are exposed to high temperature process such as post-annealing at 180 °C, passivation step, top layer planarization, and microlens forming process, they should be thermally stable without performance degradation.Decreasing DC and enhancing thermal stability have been generally improved by introducing new buffer layers 12 such as MoO x 13 , WO x 14 , and VO x 15 . However, MoO x is susceptible to the loss of oxygen during evaporation which can result in the change of stoichiometry and electronic energy levels 16 . Since various active materials are also used in fabricating OPDs, the band structure of a buffer layer should be aligned to HOMO and LUMO levels of bulk heterojuction (BHJ) films. Conventional buffer layers such as MoO x are very difficult to change their band structure, i.e. their HOMO and LUMO levels do not change without regard to neighboring active materials. Therefore, new buffer layers with thermal stability and easily adjustable band structure have been required.As one of good candidates for new buffer layers, silicon oxynitride (SiO x N y ) film has been well received because its band structure is able to be freely controlled by adjusting the x and y. Moreover, it is thermally stable at high temperature process and is also chemically inert enough to be used in electronic devices 17 such as thin-film tr...

show abstract

Bandgap measurement of thin dielectric films using monochromated STEM-EELS

Cited by 84 publications

References 26 publications

The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures

Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

Contact Info

Product

Resources

About