The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Lamers, M.W.P.E.; Hintzsche, L. E.; Butler, Keith T.; Vullum, Per Erik; Fang, Chung; Marsman, Martijn; Jordan, Gerald; Harding, John H.; Kresse, Georg; Weeber, Arthur

doi:10.1016/j.solmat.2013.04.026

Cited by 8 publications

(6 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If the defect density is high, the fixed charge density will be high, but more recombination centers will be present as well. These results are exactly in line with recent experimental studies [10,19]. Based on our present results, we suppose that it will be hard to achieve a negative, fixed charge by using the standard a-SiN:H passivation.…”

Section: Discussionsupporting

confidence: 93%

See 1 more Smart Citation

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3N
Hintzsche
¹
,
Fang
²
,
Marsman
³

et al. 2015
Phys. Rev. Applied
8
0
6
0
View full text Add to dashboard Cite

Modern electronic devices are unthinkable without the well-controlled formation of interfaces at heterostructures. These often involve at least one amorphous material. Modeling such interfaces poses a significant challenge, since a meaningful result can only be expected by using huge models or by drawing from many statistically independent samples. Here we report on the results of high throughput calculations for interfaces between crystalline silicon (c-Si) and amorphous silicon nitride (a-Si3N3.5:H), which are omnipresent in commercially available solar cells. The findings reconcile only partly understood key features. At the interface, threefold coordinated Si atoms are present. These are caused by the structural mismatch between the amorphous and crystalline part. The local Fermi level of undoped c-Si lies well below that of a-SiN:H. To align the Fermi levels in the device, charge is transferred from the a-SiN:H part to the c-Si part resulting in an abundance of positively charged, threefold coordinated Si atoms at the interface. This explains the existence of a positive, fixed charge at the interface that repels holes.

show abstract

Section: Discussionsupporting

confidence: 93%

“…For this reason, several authors recently examined c-Si/a-SiN:H interfaces by using computer simulations [13][14][15][16][17][18][19][20]. For example, Butler et al performed a topological analysis and compared the density of structural defects for different thicknesses of the transition region between c-Si and a-SiN:H [15,16].…”

mentioning

confidence: 99%

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3N
Hintzsche
¹
,
Fang
²
,
Marsman
³

et al. 2015
Phys. Rev. Applied
8
0
6
0
View full text Add to dashboard Cite

show abstract

“…The publications of Lamers et al [1,2] on SiN x :H passivation indicate the interface between dielectric and silicon bulk to be the crucial location for surface passivation quality.…”

Section: Introductionmentioning

confidence: 99%

Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

et al. 2014

View full text Add to dashboard Cite

“…[ 29 ] The additional nitridation step is a plasma treatment process that causes atomically distorted interfaces. [ 107,108 ] Atomic‐scale Si‐rich thin layers are known to be formed in the immediate vicinity of the distorted interface, which might cause a higher electric conductivity. This combination can be shown to reduce polarization‐type PID effectively.…”

Section: Polarization‐type Pidmentioning

confidence: 99%

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

View full text Add to dashboard Cite

n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.

show abstract

The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Cited by 8 publications

References 11 publications

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3N
Hintzsche
¹
,
Fang
²
,
Marsman
³

et al. 2015
Phys. Rev. Applied
8
0
6
0
View full text Add to dashboard Cite

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3N
Hintzsche
¹
,
Fang
²
,
Marsman
³

et al. 2015
Phys. Rev. Applied
8
0
6
0
View full text Add to dashboard Cite

Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Contact Info

Product

Resources

About

The interface of a-SiNx:H and Si: Linking the nano-scale structure to passivation quality

Cited by 8 publications

References 11 publications

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3NHintzsche1, Fang2, Marsman3 et al. 2015Phys. Rev. Applied8060View full textAdd to dashboardCite

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3NHintzsche1, Fang2, Marsman3 et al. 2015Phys. Rev. Applied8060View full textAdd to dashboardCite

Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Contact Info

Product

Resources

About

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3N
Hintzsche
¹
,
Fang
²
,
Marsman
³

et al. 2015
Phys. Rev. Applied
8
0
6
0
View full text Add to dashboard Cite

Formation of a Positive Fixed Charge atc−Si(111)/a−Si3N
Hintzsche
¹
,
Fang
²
,
Marsman
³

et al. 2015
Phys. Rev. Applied
8
0
6
0
View full text Add to dashboard Cite