Bandgap Energy of InGaAsP Quaternary Alloy

Yamazoe, Yoshimitsu; Nishino, Taneo; Hamakawa, Yoshihiro; Kariya, Tetsuya

doi:10.1143/jjap.19.1473

Cited by 41 publications

(9 citation statements)

References 27 publications

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“…Kuphal's additional term improves the agreement considerably. We note as well that the electroreflectance data of Yamazoe et al (6) agree with values obtained from Eq. [5] to within 5 meV.…”

Section: Table II Lattice Parameters (~) Elastic Constants (• 1011 Dy...supporting

confidence: 88%

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X‐Ray, Photoluminescence, Stoichiometry, and Thickness Mapping of In1 − x Ga x As y P 1 − y

Macrander

Lau

1991

J. Electrochem. Soc.

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Maps of InP/InGaAsP/InP double heterostructures grown by hydride vapor phase epitaxy and by metalorganic chemical vapor deposition on (001) InP substrates have been obtained. X-ray double-crystal rocking curves of the (004) reflection and photoluminescence spectra at room temperature were separately obtained at 65 locations on two in. diam wafers. The x-ray data were used to obtain maps of the lattice mismatch and of the thickness of the InGaAsP layer. The photoluminescence data were used to obtain maps of the bandgap, and these were combined with the mismatch data to yield maps of the Ga and As mole fractions. The thickness was found to closely correlate to both the Ga and As mole fractions for hydride vapor phase epitaxy but to weakly correlate to only the Ga mole fraction for metal-organic chemical vapor deposition. 9 'el""--9 'et""--9 "ev"'--9 "=P"'-O -eP--"-O 9 O 4..

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Section: Table II Lattice Parameters (~) Elastic Constants (• 1011 Dy...supporting

confidence: 88%

“…4. The constant mismatch solutions fall on straight lines, but the constant wavelength solutions are kinked at zero mismatch because of the crossing of the [6] light and heavy hole valence bands.…”

Section: Or or As (' §mentioning

confidence: 97%

X‐Ray, Photoluminescence, Stoichiometry, and Thickness Mapping of In1 − x Ga x As y P 1 − y

Macrander

Lau

1991

J. Electrochem. Soc.

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“…Second, the bandgap energies of the WZ quaternary alloys have not been reported in the literature. According to Yamazoe et al, the band gap energy of ZB In 1– x Ga x As y P 1– y quaternary alloy lattice-matched to InP is given as E g = 1.35–0.738 y + 0.138 y 2 at room temperature . From this equation, the bandgap energies of the ring and axial QW are calculated to be ∼0.89 and ∼1.115 eV, which correspond to the wavelengths of ∼1.39 and ∼1.11 μm, respectively, assuming no quantum confinement effect.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…According to Yamazoe et al, the band gap energy of ZB In 1−x Ga x As y P 1−y quaternary alloy lattice-matched to InP is given as E g = 1.35−0.738y + 0.138y 2 at room temperature. 42 From this equation, the bandgap energies of the ring and axial QW are calculated to be ∼0.89 and ∼1.115 eV, which correspond to the wavelengths of ∼1.39 and ∼1.11 μm, respectively, assuming no quantum confinement effect. Also, from the empirical equation it can be noted that more arsenic leads to a lower bandgap energy and a longer emission wavelength.…”

Section: Nano Lettersmentioning

confidence: 99%

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

Yang

Wong‐Leung

et al. 2019

Nano Lett.

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We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/ InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of highperformance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.

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“…The model has been improved by adding coefficient represents the effective bowing parameter. The relation becomes (Yamazoe et al 1980):…”

Section: Energy Gap Of the Quaternary In 1−x Ga X As Y P 1−ymentioning

confidence: 99%

Theoretical diagnostic and prediction of physical properties of quaternary InGaAsP compound using artificial neural networks optimized by the Levenberg Maquardt algorithm

Tarbi¹,

Atmani²,

Sellam

et al. 2018

Opt Quant Electron

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The quaternaries In 1−x Ga x As y P 1−y are the main promising elements for the fabrication of optoelectronic devices. The adjustment of their physical parameters is assumed by the change of the molar fraction x and y. These parameters can be affected by the variation of temperature and pressure. To make the theoretical diagnosis of these materials, it is fundamental to know the energy gap ' E g ' and the lattice parameter ' a ', over a wide range of chemical compositions 0 ≤ x ≤ 0.47 and 0 ≤ y ≤ 1 , at different temperatures and pressures. We show that by using the Artificial Neural Network method optimized by the Levenberg Maquardt algorithm ANN-LM, it is possible to obtain results very close to the experiment. The scatter plot and error calculation show that the ANN-LM model provides more accurate values of the lattice parameter than those calculated by Vegard's law. On the other hand, the energy gap values Eg(x, y, T) estimated, using the ANN-LM model, proved to be close to the experimental values that those calculated by the empirical equations. In addition, the ANN-LM method allowed us to estimate with great accuracy the values of the energy gap at different temperatures and pressures Eg(P, T). Our work provides crucial information on the physical properties of the quaternary without the use of approximations, and without taking into account the hypothesis of a perfect agreement between InGaAsP and InP substrate.

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Bandgap Energy of InGaAsP Quaternary Alloy

Cited by 41 publications

References 27 publications

X‐Ray, Photoluminescence, Stoichiometry, and Thickness Mapping of In1 − x Ga x As y P 1 − y

X‐Ray, Photoluminescence, Stoichiometry, and Thickness Mapping of In1 − x Ga x As y P 1 − y

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

Theoretical diagnostic and prediction of physical properties of quaternary InGaAsP compound using artificial neural networks optimized by the Levenberg Maquardt algorithm

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