Band-to-Band and Band-to-Acceptor Photoluminescence Studies in InSe under Pressure

Manjón, F. J.; Vijver, Y. van de; Segura, Alfredo; Muñoz, V.; Liu, Z. X.; Ulrich, C.

doi:10.1002/(sici)1521-3951(199901)211:1<105::aid-pssb105>3.0.co;2-j

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…Regarding the effective mass of the density of states at the B point, the value obtained for m * B (0.85m 0 ) is around 7 times the value of m * Z and does not change with pressure within the accuracy provided by our model. This value, which should be considered as a rough estimation of m * B , fairly agrees with the value deduced from photoluminescence studies (m * B = (0.75 ± 0.05)m 0 ) [38]. The present estimates of m * B are also consistent with previous band-structure calculations [8] that show that the Z minimum is sharper than the secondary minima.…”

Section: Discussionsupporting

confidence: 92%

Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities

Errandonea¹,

Segura²,

Manjón³

et al. 2003

Semicond. Sci. Technol.

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We have investigated the temperature dependence of the transport parameters of Sn-doped InSe at different pressures, up to 2.5 GPa. A noticeable change in the temperature dependence of all the transport parameters has been observed above 1.2 GPa. This fact is explained by assuming the transformation of Sn shallow donors into deep donors at a hydrostatic pressure of 1.1 GPa, and by taking into account the transfer of electrons from the absolute minimum to higher energy minima in the conduction band. At ambient pressure, the position of the Sn deep level is estimated to lie 75 ± 20 meV above the absolute conduction-band minimum.

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Section: Discussionsupporting

confidence: 92%

Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities

Errandonea¹,

Segura²,

Manjón³

et al. 2003

Semicond. Sci. Technol.

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“…Photoreflectance showed a zero-crossing and photoluminescence showed a peak near 1.2 -1.25 eV, 32) similar to previously published results. 33,34) InSe film thicknesses were usually in the 50 -100 nm range, while GaSe thicknesses were typically 5 -10 nm.…”

Section: Methodsmentioning

confidence: 99%

Electron-Beam Detection of Bits Reversibly Recorded on Epitaxial InSe/GaSe/Si Phase-Change Diodes

Chaiken

Gibson

Chen

et al. 2006

jjap

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We demonstrate a data read-back scheme based on electron-beam induced current in a data storage device that utilizes thermal recording onto a phase-change medium. The phase-change medium is part of a heterojunction diode whose local charge-collection efficiency depends on the crystalline or amorphous state of a bit. Current gains up to 65 at 2 keV electron beam energy have been demonstrated using InSe/GaSe/Si epitaxial diodes. Fifteen write-erase cycles are obtained without loss of signal contrast by using a protective cap layer and short write pulses. 100 write-erase cycles have been achieved with some loss of contrast. Erasure times for the bits are longer than in similar polycrystalline In-Se media films. Possible reasons for the long erasure times are discussed in terms of a nucleation-or growth-dominated recrystallization. Prospects for extension to smaller bit sizes using electron-beam writing are considered.

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“…Their mirrorlike surfaces are practically ideal with a normal parallel to the crystallographic C axis. A variety of electron transitions determines a complicated structure of PL spectra due to the presence of energy levels of various nature in the InSe energy gap [1][2][3][4][5][6][7][8]. So, ІnSe is an indirect semiconductor [9].…”

Section: Introductionmentioning

confidence: 99%

Photoemission spectra of indium selenide

Katerynchuk¹

2006

Semicond. phys. quantum electron. optoelectron.

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For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the bandto-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum of the semiconductor. This fact is confirmed by the intensities of the radiative bands for the impurity level-c(v)-band transitions and the donor-acceptor recombination. The temperature dependences of the spectrum in the range of 100 to 300 К have also enabled to ascertain the dynamics of these radiative transitions. At the temperatures 180 to 300 К, the bands associated with the indirect transitions involving indirect free excitons are more intensive. At 100…180 К, the intensity of the bands corresponding to the direct transitions with participation of direct free excitons increases. We have determined the energies of the observed photoluminescence bands, and the band diagram of the corresponding radiative transitions in InSe has been built.

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Band-to-Band and Band-to-Acceptor Photoluminescence Studies in InSe under Pressure

Abstract: a), Y. van de Vijver (a), A. Segura (a), V. Mun Äoz (a), Z.X. Liu (b), and C. Ulrich (b)

Cited by 7 publications

References 6 publications

Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities

Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities

Electron-Beam Detection of Bits Reversibly Recorded on Epitaxial InSe/GaSe/Si Phase-Change Diodes

Photoemission spectra of indium selenide

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