Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities

Errandonea, Daniel; Segura, A.; Manjón, F. J.; Chévy, A.

doi:10.1088/0268-1242/18/4/308

Cited by 17 publications

(17 citation statements)

References 41 publications

(92 reference statements)

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“…The picture described above, which should be confirmed by combined HP-HT transport measurement [48], provides not only a plausible explanation to the observed behavior of the carrier concentration, but also is consistent with the changes observed in µ. Both facts indicate that it is reasonable model.…”

Section: Resultssupporting

confidence: 81%

Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions

Errandonea

Bandiello

Segura

et al. 2014

Journal of Alloys and Compounds

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Abstract:The electronic transport properties and optical properties of lead(II) chromate (PbCrO 4 ) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO 4 behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO 4 as a narrow-gap semiconductor.

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Section: Resultssupporting

confidence: 81%

Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions

Errandonea

Bandiello

Segura

et al. 2014

Journal of Alloys and Compounds

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“…Such band crossing has also been observed in other wolframites, such as InTaO 4 [15]. This phenomenon should influence not only the band gap but also other band-structure parameters, such as the effective masses, having a strong influence in transport properties [51], an issue that deserves to be explored in the future. transition described in a previous section.…”

Section: Electronic Structure and Band Gapmentioning

confidence: 59%

A Brief Review of the Effects of Pressure on Wolframite-Type Oxides

Errandonea

Ruiz‐Fuertes

2018

Crystals

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Abstract:In this article, we review the advances that have been made on the understanding of the high-pressure (HP) structural, vibrational, and electronic properties of wolframite-type oxides since the first works in the early 1990s. Mainly tungstates, which are the best known wolframites, but also tantalates and niobates, with an isomorphic ambient-pressure wolframite structure, have been included in this review. Apart from estimating the bulk moduli of all known wolframites, the cation-oxygen bond distances and their change with pressure have been correlated with their compressibility. The composition variations of all wolframites have been employed to understand their different structural phase transitions to post-wolframite structures as a response to high pressure. The number of Raman modes and the changes in the band-gap energy have also been analyzed in the basis of these compositional differences. The reviewed results are relevant for both fundamental science and for the development of wolframites as scintillating detectors. The possible next research avenues of wolframites under compression have also been evaluated.

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“…Such band crossing has been also observed in other wolframites, for instance InTaO4 [15]. This phenomenon should influence not only the band gap but also other band-structure parameters, such as the effective masses, having a strong influence in transport properties [51], an issue that deserves to be explored in the future.…”

Section: Electronic Structure and Band Gapmentioning

confidence: 56%