Electron-Beam Detection of Bits Reversibly Recorded on Epitaxial InSe/GaSe/Si Phase-Change Diodes

Chaiken, A.; Gibson, Gary A. P.; Chen, John; Yeh, Bao; Jasiński, Jacek B.; Liliental‐Weber, Z.; Nauka, K.; Yang, Cheol‐Woong; Lindig, D. D.; Subramanian, S.

doi:10.1143/jjap.45.2580

Cited by 8 publications

(5 citation statements)

References 53 publications

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“…low phonon energy, optical transparency from the visible to the infrared region, and high photoconductivity. [1][2][3][4][5][6] Gallium selenides are important in photocatalysis, 7 as transistors, 2 as photodetectors, 8 in photovoltaic devices where they are doped by copper and indium, 9,10 in solar cells, 11 in phase change recording media, 12,13 and as a part of chalcogenide glasses. [14][15][16] Gallium forms gallium selenide (GaSe) and digallium selenide (Ga 2 Se 3 ) compounds.…”

Section: Introductionmentioning

confidence: 99%

Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

Pečínka¹,

Prokeš

Havel³

2019

Rapid Comm Mass Spectrometry

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Rationale Gallium selenide thin films important for electronics and phase‐change materials are prepared via pulsed laser deposition (PLD); however, there are no studies concerning the analysis of gallium selenide clusters formed in the gas phase. Laser desorption ionisation (LDI) combined with time‐of‐flight mass spectrometry (TOF‐MS) has great potential to generate charged GamSen clusters, to analyse them and thus to develop new materials. Methods LDI of Ga‐Se mixtures using a pulsed laser (337 nm nitrogen) was used to generate gallium‐selenide clusters. Mass spectra were recorded (in positive and negative ion mode) on a TOF mass spectrometer equipped with a quadrupole ion trap and reflectron mass analyser. Results Ga‐Se mixtures were found to be suitable for laser ablation synthesis (LAS) of gallium selenide clusters, although their composition was strongly dependent on the laser energy. The effect of laser energy on the stoichiometry of the generated clusters was established. In total, over 100 gallium selenide GamSen clusters were generated and identified from Ga‐Se mixtures. LDI of Ga2Se3 crystals showed almost the same clusters up to m/z 1000 with lower intensities, whereas no clusters from Ga2Se3 were observed above m/z 1000. Conclusions A family of over 100 gallium selenide clusters, generated and identified for the first time, shows rich and complex chemistry. Some of the clusters represent new compounds that have the potential to be used in the development of advanced materials.

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Section: Introductionmentioning

confidence: 99%

Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

Pečínka¹,

Prokeš

Havel³

2019

Rapid Comm Mass Spectrometry

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“…A silicon-processing-compatible medium device based on an epitaxial InSe/GaSe heterojunction diode has been constructed. Bits as small as 100 nm in diameter were observed (Chaiken et al 2006). A simple fabricating procedure that combined a lift-off process containing electron beam lithography and reactive ion etching with a mechanical grinding process was proposed .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of optical disk mastering using electron beam and embossing process

Pan

Yang

et al. 2007

Opt Quant Electron

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For the requirement of higher storage capacity of an optical disk, it is a good choice to shorten pit length and linewidth. However, the conventional laser beam mastering is difficult to fabricate smaller pit length and linewidth because of the optical diffraction limit. In order to solve this problem, optical disk mastering using electron beam lithography is presented. The process parameters of the electron beam mastering such as beam current, constant linear stage velocity, developing time, and focus distance are discussed in this research. In the experiments, it was found that the focus distance is an important parameter to fabricate nano-linewidth. The experimental results reveal that the 10 µm variance in focus distance causes about 12% variation in linewidth. The photoresist with nano-pattern defined by eletron beam was transferred into metal Ni-Co (Nickel-Cobalt) mold by electroplating process. The Ni-Co mold with hardness larger than Vicker Hardness (Hv) 650 was developed. Then, with the Ni-Co mold, LIGA (German: Lithographie GaVanoformung Abformung) process was applied to replicate high-density optical disk. The Ni-Co mold is served as a master for hot embossing process to transfer the nano-pattern onto PMMA sheet. Since the feature size is in nano-meter range, the study presents an innovative demolding mechanism to demold the master from the PMMA sheet without damaging the nano-meter structure. A spiral nanogroove with 112 nm in linewidth and 80 nm in depth has been successfully fabricated about 50 Gbytes storage capacity.

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“…[1][2][3][4][5] Recently, however, InSe has attracted much attention due to its potential as a high density phasechange data storage medium. [6][7][8][9] In phase-change materials the digital information is written or erased in the surrounding crystalline matrix by a heat pulse achieving local amorphization or crystallization of the material. Such type of experiments with InSe were first performed by Nishida et al using a laser pulse.…”

Section: Introductionmentioning

confidence: 99%

“…The readout process would then also be via the electrons and the actual device is proposed to be a thin film p-n junction. [6][7][8][9] As the amorphous phase of In x Se y has the potential for data storage at the nanoscale, it would be helpful to understand its structural and electronic characteristics. Amorphous In x Se y ͑a-In x Se y ͒ structures were studied by Burian et al using wide-angle x-ray scattering ͑WAXS͒ and extended x-ray absorption fine structure ͑EXAFS͒ techniques.…”

Section: Introductionmentioning

confidence: 99%

ModelingIn−Seamorphous alloys

et al. 2005

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The structure of amorphous In x Se y ͑a-In x Se y ͒ alloys has been studied by a first principles tight-binding molecular dynamics technique. The three-dimensional amorphous structures with different densities at different compositions were prepared by quick quenching from the liquid phase. The characteristics of short-range order, namely radial distribution functions, coordination numbers, bond angle distribution functions, and the electronic structure have been analyzed. The local bonding environments of different In x Se y crystals ͑in particular, In 2 Se 3 , InSe, and In 4 Se 3 ͒ were found to be present in the amorphous phase. The average coordination number of indium is mainly four, whereas selenium is mostly two-or threefold coordinated. The majority of the bonds are heteropolar, but homopolar bonds are also present in a-In x Se y so that they cannot be excluded from a realistic description of the amorphous structure. Larger content of indium in a-In x Se y leads to an increased number of In-In bonds, as expected.

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Electron-Beam Detection of Bits Reversibly Recorded on Epitaxial InSe/GaSe/Si Phase-Change Diodes

Cited by 8 publications

References 53 publications

Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

Fabrication of optical disk mastering using electron beam and embossing process

ModelingIn−Seamorphous alloys

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