Band-edge discontinuities of strained-layer In<i>x</i>Ga1−<i>x</i>As/GaAs heterojunctions and quantum wells

Niki, Shigeru; Lin, C.L.; Chang, William S. C.; Wieder, H. H.

doi:10.1063/1.101649

Cited by 97 publications

(14 citation statements)

References 15 publications

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“…Two absorption edges are observed for the PDS of the as-grown material. The absorption edge at 1.27 eV corresponds to absorption by the cap and matches well to calculated values of the unstrained bandgap of InyGal'yAs at room temperature for y = .10 [3]. The absorption edge at 1.2 eV corresponds to the bandedge of the In.2Ga.gAs superlattice and correlates well with the energy of the photoluminescence peak (1.33 eV at 1.4 K) when a temperature correction of AEg = -3.9 x 10-4 eV / K is used [4].…”

Section: Resultssupporting

confidence: 74%

“…Again, two absorption edges are observed in the as-grown sample. The absorption edge at 1.1 eV arises from the bandedge of the In.3Ga.7As superlattice, and the second edge at 1.19 eV corresponds to absorption from the cap material [3]. After 45 seconds of annealing,the superlattice absorption edge has slightly red-shifted and the absorption edge of the cap has broadened.…”

Section: Resultsmentioning

confidence: 97%

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Rapid Thermal Annealing Effects in InxGal−xAs/GaAs Strained-Layer Superlattices

Olsen

Myers

et al. 1991

MRS Proc.

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The effect of repetitive rapid thermal annealing (RTA) at 800 'C was investigated in the strained-layer superlattices (SLS's) In.2Ga.8As/GaAs (80A/80A) and In.3Ga.7As/GaAs (80A/80A) using photoluminescence (PL) and the highly sensitive absorption technique photothermal deflection spectroscopy (PDS) [1]. The samples were repetitively annealed at 800 0 C for 15 seconds intervals up to a total time of 45 seconds. Between each anneal, PL spectra were taken at 1.4 K. PL measurements show initial red shifts and subsequent blue shifts with increased annealing times. These shifts were accompanied by a decrease in the intensity of the PL peaks. PDS absorption data were measured at room temperature for the as-grown materials and for the 45 seconds RTA." The PDS data measured at room temperature for 0 and 45 seconds RTA were consistent with the PL data. The spectral shifts may indicate a competition between the effects of thermally driven strain relaxation and chemical interdiffusion. INTRODUCTIONStrained-layer materials have greatly broadened the range of possibilities for electronic and optoelectronic devices. Among the benefits that they offer are the extension of operating wavelengths for optoelectronic applications, and higher speed electronic device operation through splitting of the heavy-hole and light-hole valence band degeneracy. It is of both fundamental and technological interest to understand the role of strain in processes such as mixing at heterointerfaces. These processes may dramatically affect device processing, performance, and long-term reliability.

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Section: Resultssupporting

confidence: 74%

Section: Resultsmentioning

confidence: 97%

Rapid Thermal Annealing Effects in InxGal−xAs/GaAs Strained-Layer Superlattices

Olsen

Myers

et al. 1991

MRS Proc.

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“…17 We also expect that carrier reemission out of the QWs followed by recombination in the GaAs barriers is operative here since the measured activation energy of ϳ150Ϯ50 meV is close to the sum of the band offsets at the In 0.12 Ga 0.88 As/GaAs interfaces ͑i.e., ⌬E V ϭ48 meV and ⌬E C ϭ90 meV͒. 23 A more complete description of E A should also include the existence of thermal excitation of deeply trapped excitons or carriers in localized regions followed by nonradiative recombination.…”

Section: A CL Spectroscopy and Imaging Of Excitonic Transitions As Amentioning

confidence: 99%

Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Lin

Rich

Sjolund

et al. 1996

Journal of Applied Physics

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P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes Appl. Phys. Lett. 101, 093506 (2012) Recent improvements of the JET lithium beam diagnostic Rev. Sci. Instrum. 83, 10D533 (2012) Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiodeWe have studied the influence of structural defects on the spatial variation of radiative and nonradiative recombination in an InGaAs/AlGaAs/GaAs resonant cavity enhanced npn heterojunction phototransistor ͑HPT͒ structure using cathodoluminescence ͑CL͒ and electron beam-induced current ͑EBIC͒ imaging. Absorber layers of InGaAs/GaAs multiple quantum wells ͑MQWs͒ are used to provide the photosensitivity for light with wavelengths that are transparent to the GaAs substrate. The current gain of the HPT under an applied bias voltage depends on the hole accumulation efficiency in the base and therefore on the hole lifetime. Strain relaxation-induced misfit dislocations in the MQWs are found to create regions of enhanced nonradiative recombination thereby reducing locally the hole accumulation efficiency and current gain. The reduction in the local EBIC signal caused by the dark line defects is less than ϳ20%, suggesting that misfit dislocations in this sample have a relatively small impact on overall device performance. EBIC and CL are found to be excellent complementary probes of the hole accumulation efficiency and relative recombination rates, owing to the high spatial resolution ͑ϳ1 m͒ of excitation of the electron beam used in these techniques. The temperature dependence of the EBIC and spectrally integrated CL images is examined for 85рTр300 K, and reveals that nonradiative recombination in the vicinity of misfit dislocations is predominantly thermally activated with observed spatial variations in lifetime and activation energy.

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“…27, whereas the ratios Q 0 and Q e were taken from Ref. 28. Figures 6-8 give a 2D representation of the electron and heavy-hole confinement potentials as described by Eqs.…”

Section: Confinement Potentialsmentioning

confidence: 99%

Finite-size effects in one-dimensional strained semiconductor heterostructures

Tapfer

Giuffrida

1996

Phys. Rev. B

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The elastic lattice deformation of strained one-dimensional ͑1D͒ semiconductor heterostructures ͑quantum wires͒ is investigated theoretically. We consider the case of lattice-mismatched ͓100͔-oriented superlattices made of cubic symmetry materials with a finite lateral dimension along the ͓011͔or the ͓001͔-crystallographic direction. Due to the small lateral dimension of the quantum wires, an elastic stress relaxation occurs near the free surfaces. The theoretical evaluation of strain fields in these 1D heterostructures is made with a Fourier series treatment and by using the elasticity theory and the condition of zero total stress on the free surfaces. We also investigate the effect of strain on the confinement potentials. In the case of 1D heterostructures made by materials with zinc-blende symmetry, the nonuniform lattice deformations can induce polarization charges due to the piezoelectric effect. Large band-gap and valence-band-splitting energy modulations of several tens of meV can be obtained near the free surfaces, inducing strong variations in the confinement potentials, which could cause red-shifted electron-hole transitions. Our analytical expressions for the nonuniform strain and stress fields, piezoelectric fields, and confinement potentials are valid for any zinc-blende heterostructure made of III-V and II-VI semiconductor compounds. Our results clearly demonstrate that, in addition to the 1D confinement that is caused by the reduced geometrical lateral dimension, the elastic strain relaxation and the piezoelectric fields on the free surfaces of the quantum wires must be considered in order to understand and describe correctly the electronic properties of 1D heterostructures.

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Band-edge discontinuities of strained-layer InxGa1−xAs/GaAs heterojunctions and quantum wells

Cited by 97 publications

References 15 publications

Rapid Thermal Annealing Effects in InxGal−xAs/GaAs Strained-Layer Superlattices

Rapid Thermal Annealing Effects in InxGal−xAs/GaAs Strained-Layer Superlattices

Influence of structural defects on carrier recombination and current gain in an InGaAs/AlGaAs/GaAs heterojunction phototransistor

Finite-size effects in one-dimensional strained semiconductor heterostructures

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