Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification

Griesinger, Uwe A.; Mader, L.; Dettmann, Wolfgang; Noelscher, Christoph; Pforr, Rainer

doi:10.1117/12.410714

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…In the literature, techniques such as lateral bias correction, isotropic under-etch, and dual trench have been proposed to correct unbalanced intensity between shifted and un-shifted space on 193-nm and 248-nm masks [4][5][6][7]. New method such as sidewall chrome alternating aperture mask (SCAAM) is proposed to solve this problem [8].…”

Section: Phase Shifting Mask Design and Analysismentioning

confidence: 98%

157-nm alternating phase-shifting mask design and high-NA images

Chen

Meute²,

Dean³

et al. 2003

SPIE Proceedings

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This report is the second series of 157nm alternating phase shifting mask done at ISMT. In this report, we present a comprehensive study of balancing aerial image through various feature sizes and pitches. New results of resist images are analyzed from a 157-nm alternating PSM with a 0.85 NA lens. The mask is made by dual trench technique with a phase-etch of 115nm and an isotropic under-etch of 90nm based on optimized simulation results. With this dual trenched mask, the wafer printing images show tremendous improvement on "line paring" phenomena. We also present more detailed study on abnormal CD variation across line array observed during this investigation. The results from this work give an initial assessment of 157-nm capability of alternating PSM and 157-nm resist imaging quality.

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Section: Phase Shifting Mask Design and Analysismentioning

confidence: 98%

157-nm alternating phase-shifting mask design and high-NA images

Chen

Meute²,

Dean³

et al. 2003

SPIE Proceedings

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show abstract

“…By chosing a proper trench sizing and depth, the 0 th diffraction order cancels, resulting in a two-beam interference. A manufacturing error in size or depth causes an intensity imbalance and a focus displacement of the phase shifting structure [6]. Rigorous simulation helps in studying these effects and various balancing options.…”

Section: Introductionmentioning

confidence: 99%

Rigorous simulation study of mask gratings at conical illumination

Köhle¹

2007

SPIE Proceedings

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For immersion technology the mask is illuminated under large angles and the features sizes are approaching the illuminating wavelength. At such operating conditions, several publications have shown rigorous diffraction effects having a noticeable effect on the aerial image. For the Kirchhoff assumption, which is commonly employed in lithography simulation, the mask is assumed to be an infinity thin transparency. This assumption implies the diffracted spectrum to be independent of the incident illumination angle and no coupling between polarization states occurs. This work is a fundamental study to deepen the understanding of rigorous off-axis effects for current and future mask technologies. This paper will show simulation studies for standard attenuated-and alternating mask gratings, which look at the diffracted spectrum of a mask grating with respect to polarization orientation and off-axis angle of the illuminating wave.

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