Backside SEU laser testing for commercial off-the-shelf SRAMs

Darracq, Frédéric; Lapuyade, Hervé; Buard, N.; Mounsi, F.; Foucher, B.; Fouillat, P.; Calvet, M.-C.; Dufayel, R.

doi:10.1109/tns.2002.805393

Cited by 48 publications

(18 citation statements)

References 8 publications

(11 reference statements)

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“…5. The system is similar to the IXL system, at the Université Bordeaux, France [31]- [33]. At the center of the system is a tunable Spectra-Physics Ti: sapphire mode-locked Tsunami laser pumped by a 5 W Millennia Pro5s laser at 532 nm (frequency doubled from Nd: YAG diodes).…”

Section: B Picosecond Laser System For Temperature Analysesmentioning

confidence: 99%

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Laird

Yuan

et al. 2009

IEEE Trans. Nucl. Sci.

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Spatially-resolved picosecond laser induced transients have been measured in a 0.18 m CMOS inverter test structure as a function of temperature. Sensitive -drain and -drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser strikes to both the OFF drain and its surroundings. With increasing temperature strikes to the OFF drain result in a pulse width which appears to broadens whilst the charge collected surprisingly decreases.

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Section: B Picosecond Laser System For Temperature Analysesmentioning

confidence: 99%

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Laird

Yuan

et al. 2009

IEEE Trans. Nucl. Sci.

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“…In addition, the pulses can be generated at wellcontrolled time and location, and the amount of charges deposited per unit depth can be varied over a wide range during the testing. The pulsed laser technique is very effective in debugging and evaluating Single-Event Transients (SETs) in linear devices [2,3,8] and Single-Event Upsets (SEUs) in digital integrated circuits (ICs) [5,9]. The laser energy of several specific wavelengths (mostly around 600 nm) has been correlated to the Linear Energy Transfer (LET) of heavy-ions in silicon material with reasonable accuracy [10,11,17,20].…”

Section: Introductionmentioning

confidence: 99%

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

et al. 2013

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Pulsed laser and heavy-ion experiments were carried out on a commercial-off-the-shelf DC/DC pulse width modulation controller to study the equivalent laser Linear Energy Transfer (LET) at wavelengths of 750 nm, 800 nm, 850 nm and 920 nm. The laser experiments showed that the shorter wavelength laser has smaller threshold energy to generate single-event transient pulses. The cross-sections versus heavy-ion LET and laser energy per pulse were obtained and correlated. The heavy-ion and laser cross-sections fit well considering the effects of metal layers on the chip. The results of this research facilitate the future pulsed laser testing by providing explicit coefficients to evaluate the equivalent laser LET, which can be used to replace costly heavy-ion testing.

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“…Accelerated ground-based radiation testing can be used for this purpose [3], but the execution of such experiments can be quite time and resource demanding. In order to reduce the costs related to radiation testing, designers can benefit from alternative techniques aimed at mimicking the interaction between radiations and devices, like laser-based or emulation based fault injection [2], [4]. The rationale behind the adoption of techniques besides radiation testing is to exploit them during design, while resorting to radiation testing only to perform the final validation of the obtained system.…”

Section: Introductionmentioning

confidence: 99%

Soft Errors in SRAM-FPGAs: A Comparison of Two Complementary Approaches

Alderighi

Casini²,

D'Angelo

et al. 2008

IEEE Trans. Nucl. Sci.

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As SRAM-based field-programmable gate arrays (FPGAs) are introduced in safety-or mission-critical applications, the availability of suitable Electronic Design Automation (EDA) tools for predicting systems dependability becomes mandatory for designers. Nowadays designers can opt either for workload-independent EDA tools, which provide information about system's dependability disregarding the workload the system is supposed to elaborate when deployed in the mission, or workload-dependent approaches. In this paper, we compare two tools for predicting the effects of soft errors in circuits implemented using SRAM-based FPGAs, a workload-independent one (STAR) and a workload-dependent one (FLIPPER). Experimental results show that the two tools are complementary and can be used fruitfully for obtaining accurate predictions.

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Backside SEU laser testing for commercial off-the-shelf SRAMs

Abstract: International audienceThis paper presents a new methodology for single-event upset laser testing of commercial off-the-shelf SRAMs. This methodology is based on backside laser test and is illustrated with some experimental results obtained with a new dedicated laser test bench

Cited by 48 publications

References 8 publications

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller

Soft Errors in SRAM-FPGAs: A Comparison of Two Complementary Approaches

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