Backscattering limitations to spatial resolution in the Auger microprobe

Olson, R. R.; LaVanier, Lori A.; Narum, D. H.

doi:10.1016/0169-4332(93)90439-i

Cited by 12 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The contrast and the resolution of AE image are two main factors concerned by SAM. It has been shown that utilization of the low primary beam voltage of 3 kV has the advantage of reducing the edge effect in analyzing a 0.7 m μ TiN particle on a steel (Forsyth & Bean, 1994;Olson et al, 1993) and an Au bar (0.6 m μ high and 1.0 m μ wide) on a Si substrate (Tuppen & Davies, 1985). While it has also been pointed out that (Ito et al, 1996) electrons with high energy will penetrate deep into the particle to reduce edge effect.…”

Section: Resultsmentioning

confidence: 99%

Monte Carlo Simulation of SEM and SAM Images

Li¹,

Mao²,

Ding³

2011

Applications of Monte Carlo Method in Science and Engineering

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Monte Carlo Simulation of SEM and SAM Images

Li¹,

Mao²,

Ding³

2011

Applications of Monte Carlo Method in Science and Engineering

View full text Add to dashboard Cite

X‐Ray Photoelectron andAuger Electron Spectroscopy

Turner¹

2000

Encyclopedia of Analytical Chemistry

View full text Add to dashboard Cite

The use of X‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) to analyze the surface composition and chemical environment of solids has been well established since about the early 1970s. These approaches find many applications in both basic and applied scientific investigations. The basic principles, i.e. surface sensitivity, the experimental observations employing these procedures, and the working methods, are described. The instrumentation utilized with the commonly available equipment for these approaches is summarized also.

show abstract

Advances in Auger microanalysis for semiconductor technology

Pamler

1994

Surface & Interface Analysis

View full text Add to dashboard Cite

Semiconductor technology issues some of the most intriguing challenges for Auger analysis. The minimum feature size is approaching the quarter-micron range, while simultaneously, the vertical dimension is being utilized for further integration resulting in an extremely nonplanar surface after numerous processing steps. Although the ultimate limitations of Auger electron spectroscopy combined with sputter depth profiling (lateral resolution < 100 nm, depth resolution < 3 nm) are compatible with such advanced processes, the analysis is often restricted by sample-related issues. An example is a depth profile through an AI/TiN/Ti metallization system which, under routine analysis conditions, has a depth resolution as poor as several hundred nanometers. Similarly, the lateral resolution accessible in the microanalysis of the sidewall of a conductor line is considerably degraded by scattering of primary electrons into adjacent areas, or the thickness of an oxide film found at the bottom of contact or via holes cannot be determined by sputter profiling because of shadowing of the ion beam and deposition of sputtered material from the sidewall to the bottom. This paper illustrates that, nevertheless, answers for such difficult analytical tasks can be found by careful optimization of analysis conditions, by simple but unconventional modification of the Auger instrument, or by novel data evaluation methods. With these results, significant input can be provided for process engineering and failure analysis in semiconductor technology.

show abstract

Backscattering limitations to spatial resolution in the Auger microprobe

Cited by 12 publications

References 8 publications

Monte Carlo Simulation of SEM and SAM Images

Monte Carlo Simulation of SEM and SAM Images

X‐Ray Photoelectron andAuger Electron Spectroscopy

Advances in Auger microanalysis for semiconductor technology

Contact Info

Product

Resources

About