Background and temperature dependent current-voltage characteristics of HgCdTe photodiodes

Rosbeck, J. P.; Starr, R. E.; Price, Stephen L.; Riley, Kent J.

doi:10.1063/1.331516

Cited by 109 publications

(28 citation statements)

References 14 publications

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“…The dependence of normalized admittance at variable signal G/ω at voltage bias ranges above +1.6 V and below -1.6 V has a steep rises related to the electron (hole) tunneling through upper (lower) half of the band gap of CdTe passivating film. 3 Electrical properties of MCT/Si After growth, mobility μ values calculated from Hall measurements at small magnetic field values (0.05 T) for single charge carrier type were significantly lower than theoretical values [4] (Fig. 2).…”

Section: Mct Passivation By Thin Cdte Layersmentioning

confidence: 94%

HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Bazovkin

Dvoretskiy

Guzev

et al. 2016

Phys. Status Solidi C

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Electrophysical properties of multilayered heteroepitaxial structures of Hg1‐xCdxTe with x=0.3‐0.4 grown by molecular beam epitaxy on silicon substrates are presented. The passivating effect of thin CdTe layers grown on top of the structures in single process is demonstrated. Comparison between experimental and theoretical temperature dependencies of reverse currents in n‐on‐p and p‐on‐n diodes fabricated by boron and arsenic ion implantation in vacancy‐doped p‐type and In‐doped n‐type Hg1‐xCdxTe films, respectively, are presented. The influence of p‐n junction position in double‐layer heterostructure on temperature dependencies of reverse currents is examined. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Mct Passivation By Thin Cdte Layersmentioning

confidence: 94%

HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Bazovkin

Dvoretskiy

Guzev

et al. 2016

Phys. Status Solidi C

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“…Electrons in HgCdTe have a much higher mobility in comparison to holes, with the ratio µ e /µ h being ϳ100. 8 Hence, the resistivity of the n-type layer is usually much lower than that of the p-type region, and so from Eq. 1, it is evident that the properties of the p-type region dominate.…”

Section: Photo-carrier Spreading Lengthmentioning

confidence: 99%

“…In all cases, the surfaces were assumed to be perfectly passivated in all calculations (that is, surface recombination velocity is zero), and R 0 A is calculated using the standard current mechanisms 5-7 and temperature-dependent mobilities for calculating the resistivity of the layers. 8 A list of all physical parameters is provided in Table I. In Fig. 2a, L S is plotted for various values of the HgCdTe mole ratio, which affects the bandgap of the material and, hence, the intrinsic carrier concentration.…”

Section: Photo-carrier Spreading Lengthmentioning

confidence: 99%

Correlation of laser-beam-induced current with current-voltage measurements in HgCdTe photodiodes

Redfern

Musca

Dell

et al. 2004

Journal of Elec Materi

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Laser-beam-induced current (LBIC) is being investigated as an alternative to electrical measurements of individual photodiodes in a two-dimensional array. This is possible because LBIC only requires two electrical contacts to an array and the two-dimensional scanning of a focused laser beam across the array to image the entire array. The measured LBIC profiles, obtained from linear arrays of HgCdTe photodiodes, will be used to study the uniformity of photodiodes in the array and to extract the R 0 A of the photodiodes. It will be shown that the shape of the LBIC signal is correlated to the electrical performance of the photodiode, with R 0 A related to the spreading length of the photodiodes. Linear arrays of n-on-p, mid-wavelength infrared (MWIR) and long wavelength infrared (LWIR) devices were formed in liquid-phase epitaxy HgCdTe epilayers using a plasma junction-formation technique. The LBIC profiles were measured on each of the devices at various temperatures. For the MWIR devices, the extracted spreading length shows no correlation with R 0 A. However, the LBIC signal does detect nonuniform devices within the array. For the case of the LWIR devices, the spreading length is extracted as a function of temperature, with the R 0 A subsequently calculated from the spreading length. The calculated R 0 A, obtained without requiring contact to each photodiode in the array, agrees well with electrical measurements. Asymmetry of the LBIC signals for certain devices in the arrays is shown to be a result of localized leakage at the photodiode junction or from the contact pads through the passivation layers. These results are confirmed by numerical modeling of the device structures.

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“…The case of p/n diodes is somewhat different as the minority carriers of the n base layer are holes, with a much lower mobility than electrons. A usual value found in the literature is 12 :…”

Section: Thermal Currentmentioning

confidence: 99%

Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe

Gravrand

Mollard

Largeron

et al. 2009

Journal of Elec Materi

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The very long infrared wavelength (>14 lm) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs). The need (mainly expressed by the space industry) for very long wave FPAs appears very difficult to fulfil. High homogeneity, low defect rate, high quantum efficiency, low dark current, and low excess noise are required. Indeed, for such wavelength, the corresponding HgCdTe gap becomes smaller than 100 meV and each step from the metallurgy to the technology becomes critical. This paper aims at presenting a status of long and very long wave FPAs developments at DEFIR (LETI-LIR/Sofradir joint venture). This study will focus on results obtained in our laboratory for three different ion implanted technologies: n-on-p mercury vacancies doped technology, n-on-p extrinsic doped technology, and p-on-n arsenic on indium technology. Special focus is given to 15 lm cutoff n/p FPA fabricated in our laboratory demonstrating high uniformity, diffusion and shot noise limited photodiodes at 50 K.

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Background and temperature dependent current-voltage characteristics of HgCdTe photodiodes

Cited by 109 publications

References 14 publications

HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Correlation of laser-beam-induced current with current-voltage measurements in HgCdTe photodiodes

Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe

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Background and temperature dependent current-voltage characteristics of HgCdTe photodiodes

Cited by 109 publications

References 14 publications

HgCdTe p+‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

HgCdTe p+‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Correlation of laser-beam-induced current with current-voltage measurements in HgCdTe photodiodes

Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe

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HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors