HgCdTe p<sup>+</sup>‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Bazovkin, V. M.; Dvoretskiy, S. A.; Guzev, A. A.; Kovchavtsev, A. P.; Marin, D. V.; Panova, Z. V.; Sabinina, I. V.; Sidorov, Yu. G.; Sidorov, G. Yu.; Tsarenko, A. V.; Варавин, В. С.; Vasiliev, V. V.; Yakushev, M. V.

doi:10.1002/pssc.201510259

Cited by 5 publications

(2 citation statements)

References 8 publications

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“…[ 4–6 ] However, these materials suffer from strict manufacturing environment and complex synthesis methods, leading to complex production process and high cost. [ 7,8 ] On the one hand, these materials need to be fabricated in an expensive high vacuum environment. On the other hand, they are commonly grown using complicated equipment such as metal organic chemical vapor deposition and molecular beam epitaxy.…”

Section: Figurementioning

confidence: 99%

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

Xie

Wang

et al. 2020

Adv Elect Materials

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Infrared (IR) photodetectors are essential for optical communication, imaging, and medical and environmental monitoring technologies. However, current IR photodetectors relying on conventional narrow‐gap semiconductors require strict lattice match epitaxy and expensive manufacturing methods, and the incompatibility with complementary metal‐oxide‐semiconductor technique cannot meet the requirement of high integration and miniaturization. Here, the controllable growth of an ultrathin narrow‐gap semiconductor Cr2S3, with thickness down to unitcell of ≈1.85 nm, is reported using chemical vapor deposition method. The as‐grown 2D Cr2S3 exhibits outstanding environmental stability with negligible degradation even after exposure in air for more than two months. By combining the optics Fourier transfer infrared spectrometer with density functional theory calculations, the bandgap of the synthesized Cr2S3 nanoflakes is determined to be 0.15 eV. A photodetector based on the 2D Cr2S3 exhibits a high responsivity (14.4 A W−1 at 520 nm, 6.0 A W−1 at 808 nm, and 3.0 A W−1 at 1550 nm) and excellent detectivity (4.0 × 1010 Jones at 520 nm, 1.7 × 1010 Jones at 808 nm, and 8.3 × 109 Jones at 1550 nm) under ambient conditions. These findings indicate that the air‐stable 2D narrow‐gap semiconductor Cr2S3 can act as a highly competitive candidate for broadband photodetector application and fundamental photophysics investigation.

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Section: Figurementioning

confidence: 99%

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

Xie

Wang

et al. 2020

Adv Elect Materials

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“…Infrared (IR) photodetection has drawn great interest in recent years due to its potential for optical communication, imaging, photomemory, etc . Conventional high‐performance IR photodetectors, including HgCdTe, GaSb/InAs, and InSb photodetectors with a specific detectivity ranging from 10 10 to 10 11 Jones, have been widely applied in mid‐ and long‐wave IR photodetection from 1 to 30 μm. However, the practical application of these IR photodetectors has been impeded by three factors: the ultralow operating temperature, the difficult molecular beam epitaxy process, and the immutable bandgaps .…”

Section: Introductionmentioning

confidence: 99%

Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

Wang

et al. 2019

InfoMat

116

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It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.

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Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction

Zeng

Lin

et al. 2018

Adv Funct Materials

357

187

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Group-10 layered transitional metal dichalcogenides including PtS2, PtSe2 and PtTe2 are excellent potential candidates for optoelectronic devices due to their unique properties such as high carrier mobility, tunable bandgap, stability and flexibility. Large-area platinum diselenide (PtSe2) with semiconducting characteristics is far scarcely investigated. Here, we report on the development of a high performance photodetector based on vertically aligned PtSe2-GaAs heterojunction which exhibited a broadband sensitivity from deep ultraviolet (DUV) to near infrared (NIR) light, with peak sensitivity from 650 to 810 nm. The Ilight/Idark ratio and responsivity of photodetector were 3×10 4 and 262 mA W −1 measured at 808 nm under zero bias voltage. The response speed of τr/τf were 5.5/6.5 μs, which represented the best result achieved for Group-10 TMDs based optoelectronic device thus far. According to first-principle density functional theory, the broad photoresponse ranging from visible to near infrared region is associated with the semiconducting characteristics of PtSe2 which has interstitial Se atoms within the PtSe2 layers. It was also revealed that the PtSe2/GaAs photodetector did not exhibit performance degradation after 6 weeks in air. The generality of the above good results suggests that the vertically aligned PtSe2 is an ideal material for high-performance optoelectronic systems in the future.

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HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Cited by 5 publications

References 8 publications

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

Two‐dimensional heterostructure promoted infrared photodetection devices

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction

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HgCdTe p+‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Cited by 5 publications

References 8 publications

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr2S3 for Broadband Photodetection with High Responsivity

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr2S3 for Broadband Photodetection with High Responsivity

Two‐dimensional heterostructure promoted infrared photodetection devices

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe2/GaAs Heterojunction

Contact Info

Product

Resources

About

HgCdTe p⁺‐n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe₂/GaAs Heterojunction