Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles

“…11,12 The SE material is usually sandwiched between an electrochemically active electrode (e.g., copper (Cu) or silver (Ag)) and an inactive electrode (e.g., platinum (Pt) or titanium nitride (TiN)). [18][19][20][21][22][23][24][25][26][27][28] The resistance switching is considered to occur because of the formation and rupture (or shrinkage) of CFs composed of Cu (or Ag), and this type of ReRAM is called the conductive bridge RAM (CBRAM). The molybdenum oxide (MoO x )-based device with the Cu electrode investigated in this report is a type of CBRAM, 29 while MoO x shows ReRAM switching behaviour even without the Cu electrode.…”

Filament formation and erasure in molybdenum oxide during resistive switching cycles

“…The current-voltage (I-V) curve exhibits hysteresis that can be exploited in nonvolatile ReRAMs. Since an early report of a Perovskite-type oxide, 7 various materials including binary oxides [8][9][10][11][12][13] and solid electrolytes [14][15][16][17][18][19][20][21][22][23][24] have been reported on this switching operation. The pristine state is typically HRS.…”

“…Its operation is expected as follows. 2,5,19,22,23 Positive voltage to the TE oxidizes Cu into cations. The Cu ions move along the electric field toward the BE, are metallized there, and grow toward the TE.…”

Realization of a Conductive Bridging Rf Switch Integrated Onto Printed Circuit Board

“…The nature of the dielectric plays an important role in the establishment of the conductive bridge. The most widely used ones are chalcogenides [7], polymer [13] and oxides [14]. In this study, Poly(methyl methacrylate) (PMMA) is used.…”