Back-end dielectrics reliability under unipolar and bipolar AC-stress

Chery, Emmanuel; Federspiel, X.; Beylier, G.; Besset, C.; Roy, D.; Volpi, F.; Chaix, Jean‐Marc

doi:10.1109/irps.2012.6241804

Cited by 5 publications

(5 citation statements)

References 8 publications

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“…Since the transient leakage current due to the charge trapping is wellmatched by a Power Law on time and so is the trap generation due to stress [5][6], the capacitance drift characteristics for both ELK and HK can be explained reasonably well by the charge trapping/ detrapping processes. …”

Section: Hk Hkmentioning

confidence: 91%

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An investigation of capacitance aging model for extreme low-k and high-k dielectrics

Chang

Lee

et al. 2015

2015 IEEE International Reliability Physics Symposium

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In this paper, Power Law model as a function of voltage is proposed as a new lifetime model to quantify the capacitance drift for Extreme Low-k (ELK) and High-k (HK) dielectrics. We experimentally proved that charge trapping/ detrapping governed the capacitance drift for both ELK and HK based on the capacitance aging and the conduction mechanism analysis. Through the trapping charge recovery study, the capacitance drift can be improved by eliminating the positive or negative charges during process. We also noted that new dipoles generated by trapped charges under stress is higher in HK than ELK, which results in not only more obvious capacitance drift but also stronger correlation between capacitance drift and capacitor breakdown in HK films.

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Section: Hk Hkmentioning

confidence: 91%

“…Where J is the transient current [5]; N is number of trap charges [6] C is the measured capacitance, and is the VAF of the capacitance drift. The validity of capacitance drift based lifetime model in Eq.…”

Section: E Capacitance Drift Lifetime Modelmentioning

confidence: 99%

An investigation of capacitance aging model for extreme low-k and high-k dielectrics

Chang

Lee

et al. 2015

2015 IEEE International Reliability Physics Symposium

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“…There have been reports on the influence of pulsed electric fields on dielectric breakdown, but the results are still debatable. [5][6][7][8] Some authors have suggested that bipolar pulses enhance dielectric reliability more so than do DC or unipolar pulse conditions, 5) whereas others have reported the lowest dielectric reliability under bipolar pulse conditions. 6) Still others have concluded that the dielectric lifetime is independent of pulse characteristics (i.e., pulse polarity and frequency).…”

mentioning

confidence: 99%

“…6) Still others have concluded that the dielectric lifetime is independent of pulse characteristics (i.e., pulse polarity and frequency). 7,8) This discrepancy may be caused by uncertainty regarding the exact dielectric breakdown mechanisms. Intrinsic breakdown is the sole breakdown mechanism considered for capacitors used as passive components or gate dielectrics.…”

mentioning

confidence: 99%

“…3,10) Previous studies have not systemically considered all of these variables (Table S1 in the online supplementary data at http://stacks.iop.org/APEX/8/031502/mmedia). [5][6][7][8] In this study, we investigated the effects of pulsed electric fields on dielectric breakdown in Cu damascene interconnects under various pulse polarities (DC, unipolar, and bipolar), pulse frequencies, electric fields, and temperatures. The changes in the TDDB characteristics were measured under various stress conditions.…”

mentioning

confidence: 99%

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Effect of pulsed electric fields on dielectric breakdown in Cu damascene interconnects

Yeon

Song

Lim

et al. 2015

Appl. Phys. Express

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We investigated the effects of pulsed electric fields on dielectric breakdown in Cu damascene interconnects. Among the DC, unipolar, and bipolar pulse conditions that were examined, the dielectric lifetime was longest under the bipolar condition because Cu contamination was suppressed due to backward Cu migration. Under the unipolar pulse condition, the dielectric lifetime was enhanced over that under the DC condition, as the pulse frequency increased. These results suggest that the intrinsic breakdown of dielectrics, in addition to Cu contamination, significantly contributes to their reliability. The bond breakdown probability decreased as the unipolar pulse width decreased below the threshold value.

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Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress

Lee

Jang

et al. 2018

2018 IEEE International Reliability Physics Symposium (IRPS)

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Back-end dielectrics reliability under unipolar and bipolar AC-stress

Cited by 5 publications

References 8 publications

An investigation of capacitance aging model for extreme low-k and high-k dielectrics

An investigation of capacitance aging model for extreme low-k and high-k dielectrics

Effect of pulsed electric fields on dielectric breakdown in Cu damascene interconnects

Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress

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