Back contact buried contact solar cells with metallization wrap around electrodes

Jooss, W.; Knauss, H.; Huster, Frank; Fath, P.; Bücher, E.; Tölle, R.; Bruton, T.M.

doi:10.1109/pvsc.2000.915783

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…Ni deposition from alkaline bath maintained at 93 ∘ C without activation led to nonuniform silicide formation on p-type grooves which was attributed to nonuniform nucleation of Ni particles causing extreme migration at Ni/Si interface during silicidation [73]. Electroless Ni-Cu based metallization has been successfully demonstrated to contact n-and p-type regions for Emitter Wrap Through, Metal Wrap Through, and Metal Wrap Around solar cell structures [76][77][78]. of less than 3 mΩ-cm 2 has been reported on boron diffused emitter of 50-140 Ω/◻ with a two-step electroless Ni plating process [79].…”

Section: Contacting P-type Layer With Ni-cu Stackmentioning

confidence: 99%

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Raval

Solanki

2013

Journal of Solar Energy

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Given the high percentage of metal cost in cell processing and concerns due to increasing Ag prices, alternative metallization schemes are being considered. Ni-Cu based front side metallization offers potential advantages of finer grid lines, lower series resistance, and reduced costs. A brief overview of various front side patterning techniques is presented. Subsequently, working principle of various plating techniques is discussed. For electroless plated Ni seed layer, fill factor values nearing 80% and efficiencies close to 17.5% have been demonstrated, while for Light Induced Plating deposited layers, an efficiency of 19.2% has been reported. Various methods for qualifying adhesion and long term stability of metal stack are discussed. Adhesion strengths in the range of 1–2.7 N/mm have been obtained for Ni-Cu contacts tabbed with conventional soldering process. Given the significance of metallization properties, different methods for characterization are outlined. The problem of background plating for Ni-Cu based metallization along with the various methods for characterization is summarized. An economic evaluation of front side metallization indicates process cost saving of more than 50% with Ni-Cu-Sn based layers. Recent successful commercialization and demonstration of Ni-Cu based metallization on industrial scale indicate a potential major role of Ni-Cu based contacts in near future.

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Section: Contacting P-type Layer With Ni-cu Stackmentioning

confidence: 99%

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Raval

Solanki

2013

Journal of Solar Energy

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“…It is predicted that laser technology will considerably simplify the fabrication of silicon photovoltaic cells, including also the fabrication process of front metallization, improving the efficiency of solar energy transformation into electrical energy. In view of the increasing demand for materials of appropriate properties we can deem it scientifically grounded and up-to-date to utilize laser techniques [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] to shape the properties of materials and their structure for example for selective sintering/melting front electrodes on silicon surface. The electrode coating should meet specific requirements to ensure low resistance of the electrode interface zone with the substrate, and in effect to improve the efficiency of the photocell.…”

Section: Introductionmentioning

confidence: 99%

The use of laser technology to shape properties of the contacts of silicon solar cells and their structure

Musztyfaga-Staszuk

Dobrzański

2014

Open Physics

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Abstract:The paper presents the results of the investigation of the front contact manufactured using silver pastes (based on experimentally prepared silver powder) on monocrystalline silicon solar cells in order to reduce contact resistance. Various deposition and fabrication techniques were applied to improve the electrical properties of contacts. The aim of the paper was to apply an unconventional method (selective laser sintering) to improve the quality of forming contacts of silicon solar cells. The topography of both the melted/sintered contact and textured silicon was investigated using atomic force microscopy. Resistance of front electrodes was measured using the Transmission Line Model (TLM). Both surface topography and cross section of front contacts were researched using the scanning electron microscopy. PACS

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“…Several concepts for back-contacted solar cells have been reported in the literature. They can be classified into: (i) the Interdigitated Back-Contact (IBC) solar cell [1], (ii) the Emitter Wrap-Through (EWT) solar cell [2], (iii) the Metallisation Wrap-Around (MWA) solar cell [3], and (iv) the Metallisation Wrap-Through (MWT) solar cell [4]. While MWT and MWA solar cells still have metal fingers on the front side and only benefit from the absence of busbars on the front side, IBC and EWT solar cells have no front metallisation at all.…”

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confidence: 99%

Laser‐processed high‐efficiency silicon RISE‐EWT solar cells and characterisation

Harder

Hermann

Merkle

et al. 2009

Phys. Status Solidi (c)

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The RISE‐EWT (Rear Intendigitated Single Evaporation Emitter Wrap Through) solar cell is a silicon wafer‐based solar cell concept that is capable of achieving solar energy conversion efficiencies of over 21%. The fabrication sequence is based exclusively on industrially feasible processing steps and avoids any photolithography and masking steps, nor does it require boron diffusion. For low process complexity, the RISE‐EWT solar cell can be made with only a single phosphorus diffusion and a single evaporation step for metallisation. All structuring of the cell is based on non‐contacting laser processing. Laser technology is the key tool for processing RISE‐EWT solar cells: The cell has laser drilled and phosphorus‐diffused holes to connect the emitter layer on the front side with the emitter and the contacts on the rear side. The emitter and base contact regions are defined by laser ablation of a diffusion barrier and KOH etch prior to phosphorus diffusion. An important feature of RISE‐EWT solar cells are steep surface features (flanks) that are produced by the laser ablation and KOH‐etching. We use these flanks to achieve reliable separation between the contacts to the n ‐type polarity and to the p ‐type polarity of the solar cell. We provide a description of RISE‐EWT manufacturing process and present an analysis of the recombination losses in our cells. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Back contact buried contact solar cells with metallization wrap around electrodes

Cited by 6 publications

References 7 publications

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

Review of Ni-Cu Based Front Side Metallization for c-Si Solar Cells

The use of laser technology to shape properties of the contacts of silicon solar cells and their structure

Laser‐processed high‐efficiency silicon RISE‐EWT solar cells and characterisation

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