Back bias depending polarization sensitivity of PtSi/p-Si Schottky barrier detectors

Abstract

The optical response of PtSi/p-Si Schottky barrier detectors structured with a lamellar grating was investigated. The quantum efficiency Y for TE and TM polarized light for different samples with grating constants Λ=3 μm, 4 μm, 5 μm, and with a grating amplitude h=1100 nm was measured. The ratio YTM/YTE strongly depends on the back bias of the diode. Theoretical calculations are presented which explain the results taking into account the locally varying Schottky barrier height and optical absorption induced by the grating.

Coupling efficiency of monolithic, waveguide-integrated Si photodetectors

“…In addition to a recent report of top-WG-integrated Ge PD, 7 there have been a few previous reports of Si PDs [8][9][10][11] integrated with upper dielectric WGs. However, most of them exhibited slow evanescent wave coupling rates and amorphous 10 or polycrystalline 11 silicon detectors, which also suffered from low quantum efficiency and high bias voltage requirements.…”

“…Therefore, it is critical to understand the trends in coupling behavior and device performance dependency on design parameters, which were not addressed in previous studies [8][9][10][11] as they reported on specific material and design choices. In our current work, we report the dependence of coupling efficiency on WG design and the resulting impact on PD performance.…”