(Ba,Sr)TiO3 Thin Films for Dram’s

Summerfelt, Scott R.

doi:10.1007/978-1-4615-6185-9_1

Cited by 23 publications

(8 citation statements)

References 91 publications

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“…1 For capacitor applications of BST films, i.e., metal-insulator-metal ͑MIM͒ structures, Pt is considered as a standard metal electrode 2,3 due to its stability against oxidation at the deposition temperatures and its rather low leakage currents, which might be related to its high work function. Especially the lower leakage currents compared to Ir/ IrO 2 ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Metal-organic chemical-vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)

Regnery

Ding

Ehrhart

et al. 2005

Journal of Applied Physics

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Thin films of the ͑Ba x Sr 1−x ͒TiO 3 ͑BST͒ solid solution series were grown by metal-organic chemical-vapor deposition ͑MOCVD͒ on platinized silicon wafers with emphasis to ͑Ba 0.7 Sr 0.3 ͒TiO 3 and SrTiO 3 . The nucleation behavior and the size of the stable nuclei were investigated by different scanning probe microscope techniques including local conductivity scanning. The characteristic differences were observed for different deposition temperatures, i.e., a homogeneous nucleation of small BST grains on the larger Pt grains at 565°C and a dominating grain-boundary nucleation at 655°C. X-ray photoelectron spectroscopy indicates a stoichiometric composition from the beginning. The microstructural evolution was investigated by high-resolution transmission electron microscopy and revealed randomly oriented grains ͑typical in-plane size 10-20 nm͒ with a high density of twins at 565°C and ͑100͒-oriented defect-free grains of slightly increased size at 655°C. This remarkably stable ͑100͒ texture seems specific for MOCVD as it is not observed for other deposition methods. The grain structure and surface morphology and their dependence on film stoichiometry ͑group-II/Ti ratio͒ are investigated. The relation between the structural and the electrical properties, capacitance, and leakage current, is finally discussed.

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Section: Introductionmentioning

confidence: 99%

Metal-organic chemical-vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)

Regnery

Ding

Ehrhart

et al. 2005

Journal of Applied Physics

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“…Upon the clean ͑001͒ Si surface at a substrate temperature of 700°C ͑measured by an optical pyrometer͒, a strontium dose of 3.4ϫ 10 14 at./ cm 2 ͓one-half a monolayer 36 ͑ML͒ of strontium͔ was deposited from a strontium MBE source at a flux of ͑3-4͒ ϫ 10 13 at./ cm 2 / s. This formed an interfacial strontium silicide layer 2,5,6 that functions to protect the underlying silicon from oxidation and thus preserve an epitaxial template for epitaxial-oxide overgrowth. 24 The wafer was then cooled to near room temperature ͑under 200°C͒, where in UHV an additional 1 2 ML ͑3.4ϫ 10 14 at./ cm 2 ͒ of strontium was deposited. Unlike the strontium deposited at high temperature, which forms strontium silicide, 2,5,6 this room-temperature-deposited strontium layer remains metallic and enables moving a little farther away from the interface before exposing the wafer to oxygen.…”

Section: Methodsmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] In practice, however, it remains a huge challenge to achieve the required electronic properties to make SrTiO 3 a viable gate dielectric for siliconbased MOSFETs. [8][9][10][11][12] The stability, bonding, and microstructure of the interface between the oxide film and the substrate are determined by thermodynamic and kinetic effects.…”

Section: Introductionmentioning

confidence: 99%

Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

He¹,

Jia

Vaithyanathan

et al. 2005

Journal of Applied Physics

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The SrTiO 3 / Si interface was investigated by transmission electron microscopy for SrTiO 3 films grown on ͑001͒ Si by molecular-beam epitaxy with different native oxide ͑SiO 2 ͒ removal treatments, and Sr/ Ti flux ratios. The interface and film microstructure were independent of the process used to remove the native oxide, but the interface reactivity was dependent on the Sr/ Ti flux ratio. A low Sr/ Ti flux ratio ͑ϳ0.8͒ resulted not only in a layer of amorphous material at the film/substrate interface but also in the formation of crystalline C49 TiSi 2 precipitates at that interface. These results are consistent with thermodynamic expectations in which it is paramount to maintain separation between TiO 2 and the underlying silicon.

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“…As the most common insulator material in FETs, SiO 2 has many advantages, such as easy formation, etching and a high-quality interface with Si. However, due to the relatively low dielectric constant of SiO 2 , a 300 nm thick layer can only have a capacitance of ∼10 nF cm −2 , limiting its potential for low power operation and requiring a search for alternative materials [6][7][8][9]. Generally, the capacitance of a material is proportional to its dielectric constant and area and inversely proportional to its dielectric thickness.…”

Section: Introductionmentioning

confidence: 99%

Present status of electric-double-layer thin-film transistors and their applications

Cai¹,

Wilson²,

Song³

2021

Flex. Print. Electron.

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As thin-film transistors (TFTs) are the workhorse of thin-film electronics, a great deal of focus has been placed upon improving their performance. One major avenue of investigation is the use of electrolyte dielectrics, which can form high capacitance electric-double layers (EDLs). The high capacitance of the EDL enables low-voltage TFT operation by inducing high carrier densities in the channel at low operating voltages. Moreover, due to the diverse range of electrolyte materials under investigation, many EDL TFTs meet the requirements for use in flexible and printable electronics. Here, the basic principles of TFTs and EDLs are introduced along with the advantages and disadvantages of different types of electrolytes. The present status of EDL TFTs is assessed with respect to different channel materials, e.g. oxide semiconductors and organic semiconductors. An overview of the potential uses of EDL is also given, including research into insulator-to-metal and insulator-to-superconductor transitions as well as incorporation into both chemical and thermal sensors. Beyond the basic EDL TFT building blocks, logic circuits for low-power electronic devices, such as memories, sensors, and neuromorphic circuits, which take advantage of the unusual properties of the EDL to mimic neural networks, are also summarized. Finally, the outlook and challenges for EDL TFTs are discussed.

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(Ba,Sr)TiO3 Thin Films for Dram’s

Cited by 23 publications

References 91 publications

Metal-organic chemical-vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)

Metal-organic chemical-vapor deposition of (Ba,Sr)TiO3: Nucleation and growth on Pt-(111)

Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

Present status of electric-double-layer thin-film transistors and their applications

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