There is no doubt that the hole transporting layer (HTL) plays an indispensable role in highly efficient devices. [5] The materials used for HTL include: (1) organic polymer molecules, [6,7] such as poly(3,4ethylenedioxy thiophene):poly(styrene sulfonate) (PEDOT:PSS), poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and poly(3-hexylthiophen-2,5-diyl) (P3HT); (2) inorganic compound, [8] for instance, CuSCN and NiO X . Besides, small molecule HTL materials have been widely studied due to their designability in molecular structure. [9] The organic 2,2′,7,7′-tetrakis (N,N-dip-methoxyphenylamine)-9,9′spirobifluorene (Spiro-OMeTAD) has been extensively employed as hole transport layer for high-performance devices due to its suitable energy level alignment and great solubility. [10] However, the amorphous characteristic of Spiro-OMeTAD depends its low hole mobility (∼4 × 10 −5 cm 2 V −1 s −1 ). [10,11] The bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) and 4-tert-Butylpyridine (TBP) are always used as the dopant of Spiro-OMeTAD. [10,11] TBP was used to reduce phase separation of Spiro-OMeTAD and Li-TFSI. [10,11] Li-TFSI can enhance the hole mobility of Spiro-OMeTAD by promoting the oxidation process of Spiro-OMeTAD in an ambient atmosphere. [12] However, this oxidation process is always uncontrollable owing to the oxidized Spiro-OMeTAD can be reduced to its initial state during the device operation process, [13] which leads to the instable device. Besides, the hygroscopic properties Lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) doped 2,2′,7,7′ -tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD) is employed as one of the most common hole transport layer. However, the Li + in Li-TFSI is easy to migrate from Spiro-OMeTAD to perovskite and SnO 2 , left the voids/pinholes in perovskite film to accelerate the invasion of oxygen and moisture, and lead to the device degradation. Here, the 1-butyl-3-methyl imidazolium phosphate dibutyl ester ([Bmim] + [DBP] − ) ionic liquid (IL) is prepared and used to modify the perovskite/Spiro-OMeTAD interface in the perovskite solar cells. The coordination interaction between P O in [Bmim] + [DBP] − IL and Pb 2+ can improve the morphology of perovskite film by passivating the uncoordinated Pb 2+ defects. The interaction between P O and Li + can suppress the undesired Li + migration. The regulated energy level assignment and ion nature of [Bmim] + [DBP] − IL can accelerate the carrier extraction at perovskite/Spiro-OMeTAD interface. The device based on the [Bmim] + [DBP] − IL interface modification yields a highly efficient photoelectric conversion efficiency of 21.16% and improved stability, outperforming that of control (19.31%) devices under the illumination of 100 mW cm −2 (AM 1.5 G).