2020
DOI: 10.1002/adfm.202000146
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Autonomously Self‐Reporting Hard Coatings: Tracking the Temporal Oxidation Behavior of TiN by In Situ Sheet Resistance Measurements

Abstract: Monitoring the structural health and integrity of coated components is of vital importance to increase their lifetime and the overall sustainability of the targeted applications. Here, the temporal oxidation behavior of TiN thin films is tracked using in situ sheet resistance measurements. Based on correlative film morphology, structure, and local composition data, it is evident that observed resistance changes are caused by oxidation of TiN. Thickness measurements of the remaining TiN under the oxide layer ar… Show more

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Cited by 10 publications
(4 citation statements)
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“…Despite the presence of Ag segregations on the surface of the films deposited at 60 °C, the resistivity marginally increased with increasing Ag content. The fact that, due to lack of thermal activation, no Ag segregates can form in the bulk of the film may be re- Previously, electrical resistivity has been employed to track phase transitions within Cr 2 AlC [46] and the oxidation behavior of TiN and V 2 AlC [47,48]. In this work, we show for the first time, that the formation of Ag segregations in sputtered ZrCuAlNi metallic glass thin films can be tracked by resistivity measurements.…”
Section: Resultsmentioning
confidence: 85%
See 1 more Smart Citation
“…Despite the presence of Ag segregations on the surface of the films deposited at 60 °C, the resistivity marginally increased with increasing Ag content. The fact that, due to lack of thermal activation, no Ag segregates can form in the bulk of the film may be re- Previously, electrical resistivity has been employed to track phase transitions within Cr 2 AlC [46] and the oxidation behavior of TiN and V 2 AlC [47,48]. In this work, we show for the first time, that the formation of Ag segregations in sputtered ZrCuAlNi metallic glass thin films can be tracked by resistivity measurements.…”
Section: Resultsmentioning
confidence: 85%
“…Previously, electrical resistivity has been employed to track phase transitions within Cr 2 AlC [ 46 ] and the oxidation behavior of TiN and V 2 AlC [ 47 , 48 ]. In this work, we show for the first time, that the formation of Ag segregations in sputtered ZrCuAlNi metallic glass thin films can be tracked by resistivity measurements.…”
Section: Resultsmentioning
confidence: 99%
“…A potential synthesis pathway for a composite has been demonstrated by oxidizing TiN thin films, where the time-and temperature-dependent formation of a TiO 2 scale on top of TiN was observed with varying thickness, and hence phase fraction ratios [67,68]. Consequently, the first synthesis strategy to form HfV 2 -HfV 2 O 7 composites comprises synthesis of HfV 2 and subsequent heat treatment in air to partly oxidize HfV 2 in an attempt to form a HfV 2 O 7 oxide scale on top.…”
Section: Composite Formation By Oxidation Of Hfvmentioning
confidence: 99%
“…It results, among other factors, from the morphology of thin films. It can be modified with oxidation [18] or photochemical oxidation [19]. The low sheet resistance could benefit conductor applications, such as those in [20][21][22].…”
Section: Introductionmentioning
confidence: 99%